2N6129

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package ·High power dissipation ·Complement to PNP type : 2N6132 2N6133 2N6134 APPLICATIONS ·Power amplifier and medium speed switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2N6129 2N6130 2N6131 Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER 2N6129 VCBO Collector-base voltage 2N6130 2N6131 2N6129 VCEO Collector-emitter voltage 2N6130 2N6131 VEBO IC IB PT Tj Tstg Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE 40 60 80 40 60 80 5 7 3 50 150 -65~150 V A A W V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 2.5 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N6129 VCEO(SUS) Collector-emitter sustaining voltage 2N6130 2N6131 2N6129 VCEsat Collector-emitter saturation voltage IC=0.1A ;IB=0 SYMBOL 2N6129 2N6130 2N6131 CONDITIONS MIN 40 60 80 TYP. MAX UNIT V 1.4 2N6130 2N6131 IC=7A;IB=1.2A 1.8 IC=2.5A ; VCE=4V 2N6129 VCE=40V;VBE=1.5V TC=150 VCE=60V;VBE=1.5V TC=150 VCE=80V; VBE=1.5V TC=150 VEB=5V; IC=0 IC=2.5A ; VCE=4V IC=0.2A ; VCE=4V 20 2.5 1.4 0.5 3.0 0.5 3.0 0.5 3.0 1.0 100 MHz V V VBE Base-emitter on voltage ICEV Collector cut-off current mA 2N6130 2N6131 mA mA IEBO hFE fT Emitter cut-off current DC current gain Transition frequency 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N6129 2N6130 2N6131 Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3