2N6752

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High breakdown voltage ·Low saturation voltage ·Fast switching speed APPLICATIONS ·Off-line power supplies ·High-voltage inverters ·Switching regulators PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6751 2N6752 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL VCBO PARAMETER 2N6751 Collector-base voltage 2N6752 2N6751 VCEO VEBO IC IB PD Tj Tstg Collector-emitter voltage 2N6752 Emitter-base voltage Collector current Base current Total Power Dissipation Junction temperature Storage temperature TC=25 Open collector Open base 450 8 10 5 150 -65~175 -65~200 V A A W Open emitter 850 400 V CONDITIONS VALUE 800 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.0 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N6751 2N6752 CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N6751 IC=0.2A ;IB=0 2N6752 VCEsat-1 VCEsat-2 VBEsat Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage 2N6751 ICEV Collector cut-off current 2N6752 IEBO hFE COB fT Emitter cut-off current DC current gain Output capacitance Transition frequency IC=5A; IB=1A IC=10A; IB=3A IC=5A ;IB=1A VCE=800V; VBE=-1.5V TC=100 VCE=850V; VBE=-1.5V TC=100 VEB=8V; IC=0 IC=5A ; VCE=3V IE=0 ; VCB=10V;f=0.1MHz IC=0.2A ; VCE=10V 8 50 15 450 1.0 3.0 1.3 0.1 1.0 0.1 1.0 2.0 40 250 60 pF MHz mA V V V CONDITIONS MIN 400 V TYP. MAX UNIT SYMBOL VCEO(SUS) Collector-emitter sustaining voltage mA 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N6751 2N6752 Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3