SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1184
DESCRIPTION ·With TO-126 package ·High breakdown voltage APPLICATIONS ·Audio frequency power amplifier ·High frequency power amplifier
PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO VCEO VEBO IC IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Ta=25 PD Total power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 15 150 -55 +150 Open emitter Open base Open collector CONDITIONS VALUE -120 -120 -5 -1 -0.1 1.5 W UNIT V V V A A
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN
2SA1184
SYMBOL
TYP.
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=-10mA; IB=0
-120
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-10µA; IC=0
-5
V
VCEsat
Collector-emitter saturation voltage
IC=-500mA; IB=-50mA
-1.0
V
VBE
Base-emitter on voltage
IC=-500mA ; VCE=-5V
-1.0
V
ICBO
Collector cut-off current
VCB=-120V; IE=0
-1
µA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-1
µA
hFE
DC current gain
IC=-100mA ; VCE=-5V
80
240
fT
Transition frequency
IC=-0.1A ; VCE=5V
120
MHz
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA1184
Fig.2 Outline dimensions
3
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