2SA1327

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA1327 · DESCRIPTION ·With TO-220Fa package ·Low collector saturation voltage ·High current capacity APPLICATIONS ·Strobe flash applications ·Audio power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current TC=25 PC Collector power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 2 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE -50 -20 -8 -10 -20 -2 20 W UNIT V V V A A A SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN 2SA1327 SYMBOL TYP. MAX UNIT V(BR)CEO VCEsat VBE ICBO IEBO hFE-1 hFE -2 COB fT Collector-emitter breakdown voltage IC=-10mA , IB=0 IC=-8A; IB=-0.4A IC=-8A ; VCE=-2V VCB=-50V;IE=0 VEB=-8V; IC=0 IC=-1A ; VCE=-2V IC=-8A ; VCE=-2V IE=0 ; VCB=-10V; f=1MHz IC=-1A ; VCE=-2V -20 V Collector-emitter saturation voltage -0.5 V Base-emitter on voltage -1.5 V Collector cut-off current -1.0 µA Emitter cut-off current -1.0 µA DC current gain 100 320 DC current gain 70 Output capacitance 400 pF Transition frequency 45 MHz hFE-1 Classifications O 100-200 Y 160-320 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1327 Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA1327 4