SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1327
·
DESCRIPTION ·With TO-220Fa package ·Low collector saturation voltage ·High current capacity APPLICATIONS ·Strobe flash applications ·Audio power amplifier applications
PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base
Absolute maximum ratings (Ta=25 )
SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current TC=25 PC Collector power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 2 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE -50 -20 -8 -10 -20 -2 20 W UNIT V V V A A A
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN
2SA1327
SYMBOL
TYP.
MAX
UNIT
V(BR)CEO VCEsat VBE ICBO IEBO hFE-1 hFE -2 COB fT
Collector-emitter breakdown voltage
IC=-10mA , IB=0 IC=-8A; IB=-0.4A IC=-8A ; VCE=-2V VCB=-50V;IE=0 VEB=-8V; IC=0 IC=-1A ; VCE=-2V IC=-8A ; VCE=-2V IE=0 ; VCB=-10V; f=1MHz IC=-1A ; VCE=-2V
-20
V
Collector-emitter saturation voltage
-0.5
V
Base-emitter on voltage
-1.5
V
Collector cut-off current
-1.0
µA
Emitter cut-off current
-1.0
µA
DC current gain
100
320
DC current gain
70
Output capacitance
400
pF
Transition frequency
45
MHz
hFE-1 Classifications O 100-200 Y 160-320
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA1327
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1327
4
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