2SA2031

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA2031 DESCRIPTION ·With TO-3PN package ·Complement to type 2SC5669 ·Wide area of safe operation ·Large current capacitance APPLICATIONS ·For audio frequency output applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Ta=25 PC Collectorl power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 140 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE -250 -230 -6 -15 -30 2.5 W UNIT V V V A A SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN 2SA2031 SYMBOL TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; RBE=< -230 V V(BR)CBO Collector-base breakdown voltage IC=-5mA; IE=0 -250 V V(BREBO Emitter-base breakdown voltage IE=-5mA; IC=0 -6 V VCEsat Collector-emitter saturation voltage IC=-7.5 A;IB=-0.75A -0.3 -2.0 V VBE Base-emitter saturation voltage IC=-7.5A ; VCE=-5V -1.5 V ICBO Collector cut-off current VCB=-250V; IE=0 -100 µA IEBO Emitter cut-off current VEB=-4V; IC=0 -100 µA hFE-1 DC current gain IC=-1A ; VCE=-5V 60 160 hFE-2 DC current gain IC=-7.5A ; VCE=-5V 35 COB Output capacitance IE=0 ; VCB=-10V,f=1MHz 400 pF fT Transition frequency IC=-1A ; VCE=-5V 10 MHz Switching times ton Turn-on time IC=-7.5A;RL=6.67C IB1=-IB2=-0.75A VCC=-50V 0.45 µs tstg Storage time 1.75 µs tf Fall time 0.25 µs 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA2031 Fig.2 Outline dimensions (unindicated tolerance:±0.1mm) 3 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA2031 4