2SA483

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA483 DESCRIPTION ·With TO-66 package ·Complement to type 2SC783 ·High voltage: VCEO=-150V(min) APPLICATIONS ·Power amplifier applications ·Vertical output applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC IE PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE -150 -150 -5 -1.5 1.5 20 150 -65~150 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN TYP. 2SA483 SYMBOL MAX UNIT V(BR)CEO V(BR)CBO VCEsat VBE ICBO IEBO hFE COB fT Collector-emitter breakdown voltage IC=-10mA ;IB=0 IC=-0.5mA ;IE=0 IC=-0.5A; IB=-50mA IC=-0.5A ; VCE=-10V VCB=-150V; IE=0 VEB=-5V; IC=0 IC=-0.1A ; VCE=-10V IE=0 ; VCB=-10V;f=1.0MHz IC=-0.1A ; VCE=-10V -150 V Collector-base breakdown voltage -150 V Collector-emitter saturation voltage -1.8 V Base-emitter on voltage -1.8 V Collector cut-off current -0.1 mA Emitter cut-off current -0.1 mA DC current gain 30 240 Output capacitance 50 pF Transition frequency 10 MHz hFE Classifications R 30-80 O 70-140 Y 120-240 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA483 Fig.2 outline dimensions 3