SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA957 2SA958
DESCRIPTION ·With TO-220 package ·High breakdown voltage ·High power dissipation APPLICATIONS ·For general purpose applications
PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL PARAMETER 2SA957 VCBO Collector-base voltage 2SA958 2SA957 VCEO Collector-emitter voltage 2SA958 VEBO IC IB PT Tj Tstg Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base -200 -6 -2.0 -1.0 30 150 -55~150 V A A W Open emitter -200 -150 V CONDITIONS VALUE -150 V UNIT
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER 2SA957 IC=-25mA ,IB=0 2SA958 IC=-0.7A; IB=-0.07A VCB=-150V; IE=0 CONDITIONS
2SA957 2SA958
SYMBOL
MIN -150
TYP.
MAX
UNIT
VCEO(BR)
Collector-emitter breakdown voltage
V -200 -1.5 V
VCEsat
Collector-emitter saturation voltage 2SA957 2SA958
ICBO
Collector cut-off current
-100 VCB=-200V; IE=0 VEB=-6V; IC=0 IC=-0.7A ; VCE=-10V IC=-0.2A ; VCE=-12V 40 20 -1.0
µA
IEBO hFE fT
Emitter cut-off current DC current gain Transition frequency
mA
MHz
Switching times resistive load tr ts tf Rise time Storage time Fall time IC=-1.0A IB1=- IB2=-0.1A RL=20B;VCC=-20V 0.4 1.5 0.5 µs µs µs
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA957 2SA958
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
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