SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
·
2SB827
DESCRIPTION ·With TO-3PN package ·Complement to type 2SD1063 ·Wide area of safe operation ·Low collector-emitter saturation voltage : VCE(sat)=(–)0.4V max. APPLICATIONS ·Universal high current switching as solenoid driving,high speed inverter and converter.
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION
Absolute maximum ratings(Tc=25 )
SYMBOL VCBO VCEO VEBO IC ICP PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -60 -50 -6 -7 -14 60 150 -55~150 UNIT V V V A A W
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-1mA ;RBE=? IC=-1mA ;IE=0 IE=-1mA ;IC=0 IC=-4A; IB=-0.4A VCB=-40V ;IE=0 VEB=-4V; IC=0 IC=-1A ; VCE=-2V IC=-5A ; VCE=-2V IC=-1A ; VCE=-5V 70 30 MIN -50 -60 -6
2SB827
SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat ICBO IEBO hFE-1 hFE-2 fT
TYP.
MAX
UNIT V V V
-0.4 -0.1 -0.1 280
V mA mA
10
MHz
Switching times ton tstg tf Turn-on time Storage time Fall time IC=-2.0A; IB1=-IB2=-0.2A VCC=-20V;RL=10G 0.20 0.70 0.10 µs µs µs
hFE-1 Classifications Q 70-140 R 100-200 S 140-280
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SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB827
Fig.2 outline dimensions
3
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB827
4
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