SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC1904
DESCRIPTION ·With TO-126 package ·Complement to type 2SA899 APPLICATIONS ·For high frequency power amplification
PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO VCEO VEBO IC PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 150 150 5 50mA 1 150 -55~150 UNIT V V V A W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=1mA; RBE=9 IC=10µA ;IE=0 IE=10µA ;IC=0 IC=10mA ;IB=1mA IC=10mA ;IB=1mA VCB=140V; IE=0 VEB=4V; IC=0 IC=10mA ; VCE=5V IE=0 ; VCB=10V;f=1MHz IC=10mA ; VCE=5V 35 MIN 150 150 5
2SC1904
SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE COB fT
TYP.
MAX
UNIT V V V
0.5 1.0 1 1 500 3 70
V V µA µA
pF MHz
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC1904
Fig.2 Outline dimensions
3
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