2SC2336

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2336 2SC2336A 2SC2336B DESCRIPTION ·With TO-220 package ·Complement to type 2SA1006, 2SA1006A,2SA1006B APPLICATIONS ·Audio frequency power amplifier ·High frequency power amplifier PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-220) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER 2SC2336 VCBO Collector-base voltage 2SC2336A 2SC2336B 2SC2336 VCEO Collector-emitter voltage 2SC2336A 2SC2336B VEBO IC ICM PT Tj Tstg Emitter-base voltage Collector current Collector current-peak Total power dissipation Junction temperature Storage temperature Ta=25 TC=25 Open collector Open base Open emitter CONDITIONS VALUE 180 200 250 180 200 250 5 1.5 3.0 1.5 W 25 150 -55~150 V A A V V UNIT SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency 2SC2336 2SC2336A 2SC2336B SYMBOL VCE(sat) VBE(sat) ICBO IEBO hFE-1 hFE-2 Cob fT CONDITIONS IC=0.5A; IB=50mA IC=0.5A ;IB=50mA VCB=150V; IE=0 VEB=3V; IC=0 IC=5mA ; VCE=5V IC=150mA ; VCE=5V IE=0 ; VCB=10V,f=1MHz IC=100mA ; VCE=10V MIN TYP. MAX 1.0 1.5 1 1 UNIT V V µA µA 30 60 30 95 320 pF MHz hFE-2 Classifications R 60-120 Q 100-200 P 160-320 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2336 2SC2336A 2SC2336B Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2336 2SC2336A 2SC2336B 4 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2336 2SC2336A 2SC2336B 5