2SC2580

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2580 DESCRIPTION ·With TO-3PN package ·Complement to type 2SA1105 ·High power dissipation ·High current capability APPLICATIONS ·Audio power amplifier ·DC-DC converter PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 180 120 6 9 90 150 -55~150 UNIT V V V A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=25mA ;IB=0 IC=1mA ;IE=0 IE=1mA ;IC=0 IC=5A; IB=0.5A VCB=180V; IE=0 VEB=6V; IC=0 IC=3A ; VCE=4V IC=0.5A ; VCE=10V 50 MIN 120 180 6 2SC2580 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat ICBO IEBO hFE fT TYP. MAX UNIT V V V 2.5 100 100 V µA µA 20 MHz 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2580 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3