2SC2809

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2809 DESCRIPTION ·With TO-3PN package ·High speed switching ·High breakdown voltage ·Wide area of safe operation APPLICATIONS ·For power amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 300 300 6 2 4 50 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=10mA ;IB=0 IC=1mA ;IE=0 IC=1.5A; IB=0.3A IC=1.5A; IB=0.3A VCB=300V IE=0 VEB=6V; IC=0 IC=0.3A ; VCE=4V IC=0.3A ; VCE=12V 50 MIN 300 300 2SC2809 SYMBOL V(BR)CEO V(BR)CBO VCE(sat) VBE(sat) ICBO IEBO hFE fT TYP. MAX UNIT V V 1.0 1.5 100 100 V V µA µA 20 MHz 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2809 Fig.2 outline dimensions 3