2SC3092

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High breakdown voltage ·Fast switching speed. ·Wide area of safe operation APPLICATIONS ·500V/7A switching regulator applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter DESCRIPTION 2SC3092 Fig.1 simplified outline (TO-3) and symbol Collector ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL VCBO VCEO VEBO IC ICP IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 PW .300µs, Duty Cycle.10% CONDITIONS Open emitter Open base Open collector VALUE 800 500 7 7 14 3 90 150 -55~150 UNIT V V V A A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=5mA ; RBE=@ IC=1mA ; IE=0 IE=1mA ; IC=0 IC=3A; IB=0.6A IC=3A; IB=0.6A VCB=500V; IE=0 VEB=5V; IC=0 IC=0.6A ; VCE=5V IC=3A ; VCE=5V IE=0 ; VCB=10V, f=1MHz IC=0.6 A ; VCE=10V 15 8 MIN 500 800 7 2SC3092 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCE(sat) VBE(sat) ICBO IEBO hFE-1 hFE-2 COB fT TYP. MAX UNIT V V V 1.0 1.5 10 10 50 V V µA µA 80 18 pF MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=4A; IB1=0.8A;IB2=-1.6A VCC=200V ,RL=50F 0.5 3.0 0.3 µs µs µs hFE-1 classifications L 15-30 M 20-40 N 30-50 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3092 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3