2SC3212

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3212 2SC3212A DESCRIPTION ·With TO-3PFa package ·Low collector saturation voltage ·High VCBO ·High speed switching APPLICATIONS ·For high speed switching applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER 2SC3212 VCBO Collector-base voltage 2SC3212A VCEO VEBO IC ICM IB Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current TC=25 PC Collector power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 3 150 -55~150 Open base Open collector Open emitter 900 500 8 7 15 4 100 W V V A A A CONDITIONS VALUE 800 V UNIT SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3212 2SC3212A CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage 2SC3212 2SC3212A CONDITIONS IC=0.2A;L=25mH IC=5A ;IB=1A IC=5A ;IB=1A VCB=800V; IE=0 100 VCB=900V; IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=5V IC=5A ; VCE=5V IC=0.5A ; VCE=10V;f=1MHz 15 8 3.5 MHz 100 µA µA MIN 500 1.0 1.5 TYP. MAX UNIT V V V SYMBOL VCEO(SUS) VCEsat VBEsat ICBO Collector cut-off current IEBO hFE-1 hFE-2 fT Emitter cut-off current DC current gain DC current gain Transition frequency Switching times 2SC3212 ton Turn-on time 2SC3212A tstg Storage time 2SC3212 tf Fall time 2SC3212A 1.2 IC=5A; VCC=200V IB1=-IB2=1A 1.2 2.5 1.0 µs µs 1.0 µs 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3212 2SC3212A Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3