2SC4336

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC4336 DESCRIPTION ·With TO-220Fa package ·Fast switching speed ·Low collector saturation voltage APPLICATIONS ·For use in switching power supplies ,DC/DC converters,motor drivers,solenoid drivers,etc PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Base current(DC) TC=25 PT Total power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 2 150 -55~150 Open emitter Open base Open collector CONDITIONS VALUE 100 100 7 10 20 6 30 w UNIT V V V A A A SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Collector capacitance Transition frequency CONDITIONS IC=5.0A , IB=0.6A;L=1mH IC=6A ;IB=0.3A IC=8A ;IB=0.4A IC=6A ;IB=0.3A IC=8A ;IB=0.4A VCB=100V; IE=0 VCE=100V; VBE(off)=-1.5V Ta=125 VEB=5V; IC=0 IC=1A ; VCE=2V IC=2A ; VCE=2V IC=6A ; VCE=2V IE=0; VCB=10V; f=1MHz IC=0.5A; VCE=10V 100 100 60 MIN 100 SYMBOL VCEO(SUS) VCEsat-1 VCEsat-2 VBEsat-1 VBEsat-2 ICBO ICEX IEBO hFE-1 hFE-2 hFE-3 COB fT 2SC4336 TYP. MAX UNIT V 0.3 0.5 1.2 1.5 10 10 1.0 10 V V V V µA µA mA µA 400 120 150 pF MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=6A ;IB1=-IB2=0.3A VCCC50V;RL=8.3E 0.3 1.5 0.3 µs µs µs hFE-2 Classifications M 100-200 L 150-300 N 200-400 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4336 Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3