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2SC5339

2SC5339

  • 厂商:

    SAVANTIC

  • 封装:

  • 描述:

    2SC5339 - Silicon NPN Power Transistors - Savantic, Inc.

  • 数据手册
  • 价格&库存
2SC5339 数据手册
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC5339 DESCRIPTION ·With TO-3P(H)IS package ·High voltage ,high speed ·Low saturation voltage ·Bult-in damper diode APPLICATIONS ·Horizontal deflection output for medium resolution display,color TV ·High speed switching applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 1500 600 5 7 14 3.5 50 150 -55~150 UNIT V V V A A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC5339 CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Collector output capacitance Diode forward voltage Transition frequency CONDITIONS IE=400mA ;IC=0 IC=5A; IB=1.25A IC=5A; IB=1.25A VCB=1500V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=5A ; VCE=5V IE=0 ; VCB=10V,f=1MHz IF=5A IE=0.1A ; VCE=10V 71 10 4 82 1.35 2.4 1.8 MIN 5 5 1.3 1 250 30 8 pF V MHz TYP. MAX UNIT V V V mA mA SYMBOL V(BR)EBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 Cob VF fT Switching times ts tf Storage time Fall time 4 0.2 6 0.5 µs µs ICP=5A;IB1(end) =1.1A fH=31.5kHz 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC5339 Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm) 3 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC5339 4
2SC5339 价格&库存

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