2SD1933

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1933 DESCRIPTION ·With TO-220Fa package ·DARLINGTON ·Complement to type 2SB1342 ·High DC current gain APPLICATIONS ·Low frequency power amplification PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector -emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25 PC Collector power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 2 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 80 80 7 4 6 30 W UNIT V V V A A SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1933 CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=50µA; IE=0 IC=1mA;IB=0 IC=2A ;IB=4mA VCB=80V; IE=0 VEB=5V; IC=0 IC=2A ; VCE=3V IE=-0.2A ; VCE=5V;f=10MHz IE=0 ; VCB=10V;f=1MHz 1000 40 35 MIN 80 80 1.5 100 3.0 10000 MHz pF TYP. MAX UNIT V V V µA mA SYMBOL V(BR)CBO V(BR)CEO VCEsat ICBO IEBO hFE fT COB 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1933 Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm) 3