2SD2061

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2061 DESCRIPTION ·With TO-220Fa package ·Low collector saturation voltage ·Excellent DC current gain characteristics ·Wide safe operating area APPLICATIONS ·For low frequency power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak TC=25 PC Collector power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 2 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 80 60 5 3 6 30 W UNIT V V V A A SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2061 CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=1mA , IB=0 IC=50µA , IE=0 IE=50µA , IC=0 IC=2A; IB=0.2A IC=2A ;IB=0.2A VCB=60V IE=0 VEB=4V; IC=0 IC=0.5A ; VCE=5V IC=0.5A ; VCE=5V;f=5MHz IE=0 ; VCB=10V ,f=1MHz 100 8 70 MIN 60 80 5 1.0 1.5 10 10 320 MHz pF TYP. MAX UNIT V V V V V µA µA SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE fT Cob hFE Classifications E 100-200 F 160-320 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD2061 Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3