2SD2129

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2129 DESCRIPTION ·With TO-220F package ·DARLINGTON ·High DC current gain ·Low collector saturation voltage APPLICATIONS ·High power switching applications ·Hammer drive,pulse motor drive applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Ta=25 PC Collector dissipation TC=25 Tj Tstg Junction temperature Storage temperature 20 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 100 100 7 3 5 0.5 2 W UNIT V V V A A A SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=30mA ;IB=0 IC=1.5A ;IB=3mA IC=3A ;IB=12mA IC=1.5A ;IB=3mA VCB=100V; IE=0 VEB=6V; IC=0 IC=1.5A ; VCE=3V IC=3A ; VCE=3V 2000 1000 MIN 100 2SD2129 SYMBOL V(BR)CEO VCEsat-1 VCEsat-2 VBEsat ICBO IEBO hFE-1 hFE-2 TYP. MAX UNIT V 1.5 2.0 2.0 100 2.5 15000 V V V µA mA Switching times ton ts tf Turn-on time Storage time Fall time IB1=-IB2=3mA VCC>30V ,RL=20? 1.0 5.0 2.0 µs µs µs 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD2129 Fig.2 Outline dimensions 3