BU2508DF

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU2508DF DESCRIPTION ·With TO-3PFa package ·High voltage,high speed ·Built-in damper diode APPLICATIONS ·For use in horizontal deflection circuits of colour TV PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO IC ICM IB IBM Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Collector current (DC) Collector current (Pulse) Base Collector current (DC) Base current (Pulse) Total power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base CONDITIONS VALUE 1500 700 8 15 4 6 45 150 -65~150 UNIT V V A A A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Diode forward voltage Collector capacitance CONDITIONS IC=100mA ;IB=0,L=25mH IE=600mA ;IC=0 IC=4.5A ;IB=1.12A IC=4.5A ;IB=1.7A VCE=BVCES; VBE=0 Tj=125 VEB=7.5V; IC=0 IC=1A ; VCE=5V IC=4.5A ; VCE=1V IF=4.5A IE=0; f=1MHz;VCB=10V 4 MIN 700 7.5 BU2508DF SYMBOL VCEO(SUS) VEBO VCEsat VBEsat ICES IEBO hFE-1 hFE-2 VF CC TYP. MAX UNIT V 13.5 1.0 1.1 1.0 2.0 227 13 5.5 1.6 80 7.0 2.0 V V V mA mA V pF 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BU2508DF Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3