BU2525AW

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU2525AW DESCRIPTION ·With TO-247 package ·High voltage ·High speed switching APPLICATIONS ·For use in horizontal deflection circuits of large screen colour TV receivers. PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-247) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO IC ICM IB IBM Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Collector current (DC) Collector current -peak Base Collector current (DC) Base current -peak Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base VALUE 1500 800 12 30 8 12 125 150 -65~150 UNIT V V A A A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Collector capacitance CONDITIONS IC=100mA ;IB=0,L=25mH IE=1mA ;IC=0 IC=8A ;IB=1.6 A IC=8A ;IB=1.6 A VCE=BVCES; VBE=0 Tj=125 VEB=7.5V; IC=0 IC=0.1A ; VCE=5V IC=8A ; VCE=5V IE=0; f=1MHz;VCB=10V 5 MIN 800 7.5 BU2525AW SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBEsat ICES IEBO hFE-1 hFE-2 CC TYP. MAX UNIT V 13.5 5.0 1.3 1.0 2.0 1.0 13 7 145 9.5 V V V mA mA pF 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BU2525AW Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3