SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION ·With TO-220C package ·High voltage ,high speed APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
BUT12 BUT12A
Absolute maximum ratings (Tc=25 )
SYMBOL VCBO PARAMETER Collector-base voltage BUT12 BUT12A BUT12 BUT12A CONDITIONS Open emitter VALUE 850 1000 400 450 9 8 20 4 6 Tmb225 100 150 -65~150 UNIT V
VCEO VEBO IC ICM IB IBM Ptot Tj Tstg
Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Base current-peak Total power dissipation Junction temperature Storage temperature
Open base Open collector
V V A A A a W
THERMAL CHARACTERISTICS
SYMBOL Rth j-mb PARAMETER Thermal resistance from junction to mounting base VALUE 1 UNIT K/W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER BUT12 IC=0.1A; IB=0, L=25mH BUT12A BUT12 BUT12A BUT12 BUT12A IC=6A; IB=1.2A CONDITIONS
BUT12 BUT12A
SYMBOL
MIN 400
TYP.
MAX
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
V 450
VCEsat
Collector-emitter saturation voltage
1.5 IC=5A; IB=1A IC=6A; IB=1.2A 1.5 IC=5A; IB=1A VCE=Rated VCES ;VBE=0 Tj=125 VEB=9V; IC=0 IC=10mA ; VCE=5V IC=1A ; VCE=5V 10 10 1.0 3.0 10 35 35
V
VBEsat
Base-emitter saturation voltage
V
ICES IEBO hFE-1 hFE-2
Collector cut-off current Emitter cut-off current DC current gain DC current gain
mA mA
Switching times resistive load ton ts tf Turn-on time Storage time Fall time For BUT12A IC=5A; IB1=- IB2=1A 1.0 4.0 0.8 µs µs µs
For BUT12 IC=6A; IB1=- IB2=1.2A
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
BUT12 BUT12A
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
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