SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BUT56 BUT56A
DESCRIPTION ·With TO-220C package ·High voltage;high speed ·High power dissipation APPLICATIONS ·Switching mode power supply
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
Absolut maximum ratings (Ta=25 )
SYMBOL VCBO PARAMETER BUT56 Collector-base voltage BUT56A BUT56 VCEO VEBO IC ICM IBM Ptot Tj Tstg Collector-emitter voltage BUT56A Emitter-base voltage Collector current Collector current-peak Base current-peak Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base 450 6 8 10 4 100 150 -65~150 V A A A W Open emitter 1000 400 V CONDITIONS VALUE 800 V UNIT
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal resistance junction to mounting case MAX 1.25 UNIT K/W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER BUT56 IC=100mA ;LC=125mH BUT56A IE=1mA ;IC=0 IC=4A ;IB=0.8A IC=4A ;IB=0.8A VCE=800V; VBE=0 Tj=150 VCE=1000V; VBE=0 Tj=150 IC=1A ; VCE=5V BUT56 hFE-2 DC current gain BUT56A fT Transition frequency IC=3A ; VCE=2V IC=0.5A ;VCE=10V;f=1.0MHz IC=4A ; VCE=5V CONDITIONS
BUT56 BUT56A
SYMBOL
MIN 400
TYP.
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
V 450 6 5.0 2.0 1.0 2.0 1.0 2.0 15 5.5 4 10 MHz 45 V V V
V(BR)EBO VCEsat VBEsat
Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage BUT56 BUT56A
ICES
Collector cut-off current
mA
hFE-1
DC current gain
Switching times toff tf Turn-off time Fall time 4 1 µs µs
IC=4A ;IB1=-IB2=1.25A tp=20µs
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
BUT56 BUT56A
Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)
3
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