2SA1162

2SA1162 Elektronische Bauelemente PNP Silicon General Purpose Transistor A suffix of "-C" specifies halogen & lead-free SOT-23 3 Dim Collector Min 2.800 1.200 0.890 0.370 1.780 0.013 0.085 0.450 0.890 2.100 0.450 Max 3.040 1.400 1.110 0.500 2.040 0.100 0.177 0.600 1.020 2.500 0.600 FEATURES n A B C D G H J K L S 1 2 A 1 L BS Base 3 RoHS Compliant Product Low noise : NF= 1dB(Typ.),10dB (Max.) Complementary to 2SC2712. Small Package. V 1 3 n Top View G 2 Emitter n 2 n C V K J (MAXIMUM RATINGS* TA=25 C ) O D H All Dimension in mm Symbol VCBO VCEO VEBO IC PD TJ, Tstg Parameter Value -50 -50 -5 150 150 -55~125 Units V V V mA mW ℃ Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Total Device Dissipation Junction and Storage Temperature *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. ELECTRICAL CHARACTERISTICS(Tamb=25℃ unless Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Noise figure Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) fT Cob NF Test otherwise specified) MIN -50 -50 -5 -0.1 -0.1 70 400 -0.3 80 7 10 V MHz pF dB TYP MAX UNIT V V V uA uA conditions Ic=-100u A,IE=0 Ic=-1mA,IB=0 IE=-100 u A,IC=0 VCB=-50V,IE=0 VEB=-5V,IC=0 VCE=-6V,IC=-2mA IC=-100mA,IB=-10mA VCE=-10V,IC=-1mA VCB=-10V,IE=0,f=1MHz VCE=-6V,Ic=0.1mA, f=1KHZ,Rg=10KΩ CLASSIFICATION OF Rank Range Marking http://www.SeCoSGmbH.com hFE O 70-140 SO Y 120-240 SY GR(G) 200-400 SG Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 2 2SA1162 Elektronische Bauelemente PNP Silicon General Purpose Transistor http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 2