2SB649

2SB649/2SB649A Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free PNP Type Plastic Encapsulate Transistors TO-126C 8.0±0.2 2.0±0.2 4.14±0.1 3.2±0.2 FEAT URES Power smplifier applica tions Power dissipation PCM : 1 W （Tamb=25℃） Collector current ICM : - 1.5 A Collector-base voltage V(BR)CBO : -180 V Collector-emitter voltage VCEO 2SB649 : -120 V 2SB649A : -160 V Operating and storage junction temperature range TJ，Tstg: -55℃ to +150 ELECTRICAL CHARACTERISTICS（Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Collector-emitter breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) * DC current gain hFE(2) * Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance VCE (sat) * VBE * VCE=- 5V, IC = -500mA IC =- 500 mA, IB=- 50 mA VCE=- 5V,IC=-150mA , VCE=-5V, IC=- 150 mA VCB=-10 V , IE =0,f=1MHz 11.0±0.2 1 2 3 O2.8±0.1 O3.2±0.1 1.4±0.1 1.27±0.1 15.3±0.2 0.76± 0.1 2.28 Typ. 4.55±0.1 0.5± 0.1 1: Emitter 2: Collector 3: Base Dimensions in Millimeters unless Test otherwise specified） MIN -180 MAX UNIT V V V -10 -10 conditions Ic=-1mA ， IE=0 Ic=-10mA ， IB=0 IE=-1mA， Ic=0 VCB=- 160 V, IE=0 VEB= -4V , IC =0 2SB649 2SB649A 2SB649 2SB649A -120 -160 -5 μA μA VCE= -5V, IC= -150 mA 60 60 30 320 200 -1 -1.5 140 27 V V MHz pF fT C ob * The 2SB649 and 2SB649A are grouped by h FE1 as follows. Rank 2SB649 2SB649A B 60 - 120 60 - 120 C 100 - 200 100 - 200 D 160 - 320 ---Any changing of specification will not be informed individual Page 1 of 2 http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A 2SB649/2SB649A Elektronische Bauelemente PNP Type Plastic Encapsulate Transistors Maximum Collector Dissipation Curve 30 Collector power dissipation PC (W) –3 ICmax Collector current IC (A) –1.0 Area of Safe Operation (–13.3 V, –1.5 A) 20 (–40 V, –0.5 A) –0.3 –0.1 DC Operation (TC = 25°C) 10 –0.03 2SB649 –0.01 –1 (–120 V, –0.038 A) (–160 V, –0.02 A) 2SB649A 0 50 100 Case temperature TC (°C) 150 –3 –10 –30 –100 –300 Collector to emitter voltage VCE (V) Typical Output Characteristics –1.0 .5 –5 Typical Transfer Characteristics –500 VCE = –5 V Collector current IC (mA) –100 Collector current IC (A) –0.8 Ta = 75°C 0 IC = 10 IB –0.6 0 5. ––4.5 .0 –4 .5 –3 0 –3. –2.5 –2.0 TC = 25°C –0.4 –1.5 –1.0 –10 –0.2 –0.5 mA IB = 0 0 –30 –50 –10 –20 –40 Collector to emitter voltage VCE (V) –1 –0.2 –0.4 –0.6 –0.8 –1.0 Base to emitter voltage VBE (V) DC Current Transfer Ratio vs. Collector Current VCE = –5V Ta = 75°C 25°C Collector to Emitter Saturation Voltage vs. Collector Current Collector to emitter saturation voltage VCE(sat) (V) –1.2 –1.0 –0.8 –0.6 –0.4 –0.2 –0 –1 350 DC current transfer ratio hFE 350 250 200 150 100 50 –25°C 25 –25 Ta –10 –100 Collector current IC (mA) =7 –25 25 –1,000 0 –1 –10 –100 –1,000 Collector current IC (mA) http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 2of 2 5°C PC = 20 W