2SC2411
Elektronische Bauelemente
NPN Transistor Plastic-Encapsulate Transistors
A suffix of "-C" specifies halogen & lead-free
SOT-23
FEATURES
1
Base
n
3 Collector
Dim A B C D G
Min 2.800 1.200 0.890 0.370 1.780 0.013 0.085 0.450 0.890 2.100 0.450
Max 3.040 1.400 1.110 0.500 2.040 0.100 0.177 0.600 1.020 2.500 0.600
Power Dissipation o PCM: 200 mW ( Tamb= 25 C) RoHS Compliant Product
3
2
Emitter
n
A L K BS
2
H
J
J K
C
Top View
1
L S V
V
G
D
H
MAXIMUM RATINGS* TA=25℃ unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ, Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature Value 40 32 5 500 200 -55-150
All Dimension in mm
Units V V V mA mW ℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat)
unless
Test
otherwise
specified)
MIN TYP MAX UNIT V V V
conditions
Ic=100µA,IE=0 Ic=1mA,IB=0 IE=100µA,IC=0 VCB=20V,IE=0 VEB=4V,IC=0 VCE=3V,IC=100mA IC=500mA,IB=50mA VCE=5V,IC=20mA,f=100MHz VCB=10V,IE=0,f=1MHz
40 32 5 1 1 82 390 0.4 250 6.0
µA µA
V MHz pF
fT
Cob
CLASSIFICATION OF Rank Range Marking
http://www.SeCoSGmbH.com
hFE P 82-180 CP Q 120-270 CQ R 180-390 CR
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 2
2SC2411
Elektronische Bauelemente
NPN Transistor Plastic-Encapsulate Transistors
Typical characteristics
2SC2411
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 2 of 2
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