3DD13005

3DD13005 Elektronische Bauelemente 4A , 700V NPN Plastic-Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Power switching applications TO-220J ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction, Storage Temperature Symbol VCBO VCEO VEBO IC PC TJ, TSTG Rating 700 400 9 4 2 150, -55~150 Unit V V V A W ° C ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut – Off Current Emitter Cut – Off Current DC Current Gain Collector to Emitter Saturation Voltage Base to Emitter Saturation Voltage Transition Frequency Fall time Storage time http://www.SeCoSGmbH.com/ Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE VCE(sat)1 VCE(sat)2 VBE(sat) fT tF tS Min. 700 400 9 20 5 5 1.8 Typ. - Max. 1 0.1 0.05 30 0.3 0.8 1.6 0.6 6.6 Unit V V V mA mA Test Condition IC=1mA, IE=0 IC=10mA, IB=0 IE=1mA, IC=0 VCB=700V, IE=0 VCE=400V, IB=0 VEB=7V, IC=0 VCE=5V, IC=1A VCE=5V, IC=10mA IC=1A, IB=0.2A IC=4A, IB=1A IC=2A, IB=0.5A VCE=10V, IC=500mA, f =1MHz IB1= -IB2=0.4A, IC=2A, VCC=120V IC=0.25A V V V MHz µs µs Any changes of specification will not be informed individually. 2-Nov-2011 Rev. A Page 1 of 1