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BAS516S

BAS516S

  • 厂商:

    SECOS

  • 封装:

  • 描述:

    BAS516S - Surface Mount Switching Diode - SeCoS Halbleitertechnologie GmbH

  • 数据手册
  • 价格&库存
BAS516S 数据手册
BAS516S Elektronische Bauelemente RoHS Compliant Product Surface Mount Switching Diode FEATURES High speed switching High reliabilty . . . . . A suffix of "-C" specifies halogen & lead-free SOD-523 CATHODE MARK MECHANICAL DATA Extremely small surface mounting type. (EMD2) High speed. (trr=4ns type.) Silicon epitaxial planer 1.2±0.05 1.6±0.1 0.3±0.05 0.12±0.05 Marking: 61 0.8±0.05 0.6±0.1 Dimensions in millimeters MAXIMUM RATINGS (TJ = 25 ℃ unless otherwise noted) Rating Peak reverse voltage DC reverse voltage Mean rectifying current Peak forward current Surge current (1s) Junction Temperature S t o r a g e Te m p e r a t u r e R a n g e Symbol V RRM VR Io I FM I surge TJ Tstg Value 85 75 250 500 500 125 - 5 5 to +125 Unit Volts Volts mA mA mA ℃ ℃ ELECTRICAL CHARACTERISTICS (TA = 25 ℃ ) Symbol VF Parameter forward voltage I F = 1 mA I F = 10 mA I F = 50 mA I F = 150 mA IR reverse current V R = 25 V V R = 75 V V R = 25 V; Tj = 150°C VR = 75 V; Tj = 150°C; Cd t rr V fr diode capacitance reverse recovery time forward recovery voltage f = 1 MHz; VR = 0; see Fig.6 when switched from IF = 10 mA to IR = 10 mA; R L = 100 Ω; measured at IR = 1 mA; see Fig.7 when switched from IF = 10 mA; tr = 20 ns; see Fig.8 1 4 1.75 30 1 30 50 nA µA µA µA pF ns V 715 855 1 1.25 mV mV V V Condition Max. Unit http://www.SeCoSGmbH.com l Any changing of specification will not be informed individua 01-Jun-2002 Rev. A Page 1 of 2 BAS516S Elektronische Bauelemente Surface Mount Switching Diode handbook, halfpage 500 IF (mA) 400 300 IF (mA) 200 300 typical values. maximum values . 200 100 100 0 0 50 100 150 Ts (oC) 200 0 0 1 VF (V) 2 Fig.1 Maximum permissible continuous forward current as a function of soldering point temperature. Fig.2 Forward current as a function of forward voltage Tj=25OC 105 IR (nA) 10 4 handbook, halfpage 0.6 V R = 75 V Cd (pF) 0.4 103 max 75 V 0.2 10 2 25 V typ typ 10 0 100 T j ( o C) 200 0 0 4 8 12 VR (V) 16 Fig.3 Reverse current as a function of junction temperature. Fig.4 Diode capacitance as a function of reverse voltage; typical values. f = 1 MHz; Tj = 25 °C. http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 2
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