BAV99BRW

BAV99BRW Elektronische Bauelemente Quad Chips Surface Mount Switching Diode Array RoHS Compliant Product FEATURES A suffix of "-C" specifies halogen & lead-free SOT-363 · · · · Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications High Conductance .055(1.40) .047(1.20) .026TYP (0.65TYP) .021REF (0.525)REF 8 o 0 o .096(2.45) .085(2.15) .053(1.35) .045(1.15) TOP VIEW .018(0.46) .010(0.26) .014(0.35) .006(0.15) .087(2.20) .079(2.00) .006(0.15) .003(0.08) .004(0.10) .000(0.00) .039(1.00) .035(0.90) MAXIMUM RATINGS (EACH DIODE) Rating Reverse Voltage Forward Current Peak Forward Surge Current Symbol VR IF IFM(surge) Value 75 150 400 Unit Vdc mAdc mAdc .043(1.10) .035(0.90) Dimensions in inches and (millimeters) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 200 1.8 RqJA PD 556 250 2.4 RqJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C DEVICE MARKING BAV99BRW= KGJ ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Reverse Breakdown Voltage (I(BR) = 100 µAdc) Reverse Voltage Leakage Current (VR = 25 Vdc, TJ = 150°C) (VR = 70 Vdc) (VR = 70 Vdc, TJ = 150°C) Diode Capacitance (VR = 0, f = 1.0 MHz) Forward Voltage (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 50 mAdc) (IF = 150 mAdc) Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) (Figure 1) RL = 100 Ω 1. FR– 5 = 1.0 X 0.75 X 0.062 in. 2.Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina. V(BR) IR 75 — Vdc µAdc — — — — 30 2.5 50 2 CD VF pF mVdc — — — — — 715 855 1000 1250 4.0 ns trr http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 09-Apr-2007 Rev. A Page 1 of 2 BAV99BRW Elektronische Bauelemente Dual Series Chips Surface Mount Switching Diode 820 Ω +10 V 2.0 k 100 µH 0.1 µF DUT 50 Ω Output Pulse Generator 50 Ω Input Sampling Oscilloscopes VR 90% IR Input Signal IR(REC) = 1.0 mA Output Pulse (IF = IR = 10 mA; Measured at IR(REC) = 1.0 mA) IF 0.1 µF tr 10% tp t IF trr t Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit 100 IF, Forward Current (mA) (mA) TA = 85°C 10 TA = – 40°C IR , Reverse Current (µA) 10 TA = 150°C 1.0 TA = 125°C 0.1 TA = 85°C TA = 55°C 1.0 TA = 25°C 0.01 TA = 25°C 0 10 20 30 VR, Reverse Voltage (V) 40 50 0.1 0.2 0.4 0.6 0.8 VF, Forward Voltage (V) 1.0 1.2 0.001 Figure 2. Forward Voltage Figure 3. Leakage Current 0.68 CD, Diode Capacitance (pF) 0.64 0.60 0.56 0.52 0 2 4 VR, Reverse Voltage (V) 6 8 Figure 4. Capacitance http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 09-Apr-2007 Rev. A Page 2 of 2