BC184

BC184 Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free 0.1 A, 45 V NPN Plastic Encapsulated Transistor FEATURES The BC184 is complementary silicon planar epitaxial transistors for use in AF small signal amplifiers and drivers, as well as for low noise pre-amplifiers applications. Both types feature good linearity of DC current gain. Collector G H TO-92 J A D B K REF. A B C D E F G H J K 1 2 Base E C F 3 Emitter Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 2.42 2.66 0.36 0.76 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction, Storage Temperature SYMBOL VCBO VCEO VEBO IC PC TJ, TSTG RATING 45 30 6 0.1 350 150, -55~150 UNIT V V V A mW ° C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) PARAMETER Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector to Emitter Saturation Voltage Base to Emitter Voltage Collector Output Capacitance Input Capacitance Transition Frequency Noise Figure SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE VCE(sat) VBE(sat) Cob Cib fT NF MIN 45 30 6 240 150 - TYP 8 - M AX 15 0.1 15 900 0.6 1.2 5 4 UNIT V V V nA µA nA V V pF pF MHz dB TEST CONDITION IC=10µA, IE = 0A IC=2mA, IB = 0A IE=0.1mA, IC = 0A VCB=30 V, IE = 0 A VCE=30 V, IB = 0 A VEB=4 V, IC =0 mA VCE=5V, IC=2mA IC=0.1A, IB=5mA IC=0.1A, IB=5mA VCB = 10V, IC = 0 A, f=1MHz VBE = 0.5V, IC = 0 A, f=1MHz VCE = 5V, IC = 10mA, f=100MHz VCE =5V, IC = 0.2mA, f=1KHz, RS=2W CLASSIFICATION OF hFE Rank Range BC184B 240-500 BC184C 450-900 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 5-Mar-2010 Rev. A Page 1 of 2 BC184 Elektronische Bauelemente 0.1 A, 45 V NPN Plastic Encapsulated Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 5-Mar-2010 Rev. A Page 2 of 2