C1815T

C1815T Elektronische Bauelemente 0.15A , 60V NPN Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURE  TO-92 G H Power Dissipation CLASSIFICATION OF hFE (1) Product-Rank Range C1815T-O 70~140 C1815T-Y 120~240 C1815T-GR 200~400 K A J D B Emitter Collector Base REF. A B C D E F G H J K Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 2.42 2.66 0.36 0.76 E C F Collector   Base  Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction, Storage Temperature Symbol VCBO VCEO VEBO IC PC TJ, TSTG Ratings 60 50 5 150 400 125, -55 ~ 125 Unit V V V mA mW °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector to Emitter Saturation Voltage Base to Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Noise Figure Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE VCE(sat) VBE(sat) fT Cob NF Min. 60 50 5 70 80 - Typ. - Max. 0.1 0.1 0.1 700 0.25 1 3.5 10 Unit V V V μA μA μA V V MHz pF dB Test condition IC=100μA, IE=0 IC=0.1mA, IB=0 IE=100μA, IC=0 VCB=60V, IE=0 VCE=50V, IB=0 VEB=5V, IC=0 VCE=6V, IC=2mA IC=100mA, IB=10mA IC=100mA, IB=10mA VCE=10V, IC=1mA, f=30MHz VCB=10V, IE=0, f=1MHz VCE=6V, IC=0.1mA, f=1KHz, RG=10KΩ http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 18-Mar-2010 Rev. B Page 1 of 2 C1815T Elektronische Bauelemente 0.15A , 60V NPN Plastic Encapsulated Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 18-Mar-2010 Rev. B Page 2 of 2