MMBT3906W

MMBT3906W Elektronische Bauelemente FEATURES General Purpose Transistor PNP Silicon RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free · · · Epitaxial Planar Die Construction Complementary NPN Type Available (MMBT3904W) Ideal for Medium Power Amplification and Switching "Lead free is available" COLLECTOR SOT-323(SC-70) Dim A A L Min 1.800 1.150 0.800 0.300 1.200 0.000 0.100 0.350 0.590 2.000 0.280 Max 2.200 1.350 1.000 0.400 1.400 0.100 0.250 0.500 0.720 2.400 0.420 B C D G H J K C 3 3 1 V Top View BS 1 BASE 2 SC-70 SOT-323 G L S J 2 EMITTER D H K V MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC Value –40 –40 –5.0 –200 Unit Vdc Vdc Vdc mAdc All Dimension in mm THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C DEVICE MARKING MMBT3906W = 2A, K5N ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage(3) (IC = –1.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = –10 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = –10 mAdc, IC = 0) Base Cutoff Current (VCE = –30 Vdc, VEB = –3.0 Vdc) Collector Cutoff Current (VCE = –30 Vdc, VEB = –3.0 Vdc) 1. FR– 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 3. Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%. http://www.SeCoSGmbH.com V(BR)CEO V(BR)CBO V(BR)EBO IBL ICEX –40 –40 –5.0 — — — — — –50 –50 Vdc Vdc Vdc nAdc nAdc    REM : Thermal Clad is a trademark of the Bergquist Company. Any changing of specification will not be informed individual 01-Jun-2004 Rev. B Page 1 of 5 MMBT3906W Elektronische Bauelemente General Purpose Transistor PNP Silicon ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS(3) DC Current Gain (IC = –0.1 mAdc, VCE = –1.0 Vdc) (IC = –1.0 mAdc, VCE = –1.0 Vdc) (IC = –10 mAdc, VCE = –1.0 Vdc) (IC = –50 mAdc, VCE = –1.0 Vdc) (IC = –100 mAdc, VCE = –1.0 Vdc) Collector – Emitter Saturation Voltage (IC = –10 mAdc, IB = –1.0 mAdc) (IC = –50 mAdc, IB = –5.0 mAdc) Base – Emitter Saturation Voltage (IC = –10 mAdc, IB = –1.0 mAdc) (IC = –50 mAdc, IB = –5.0 mAdc) HFE 60 80 100 60 30 — — –0.65 — — — 300 — — –0.25 –0.4 –0.85 –0.95 — VCE(sat) Vdc VBE(sat) Vdc SMALL– SIGNAL CHARACTERISTICS Current – Gain — Bandwidth Product (IC = –10 mAdc, VCE = –20 Vdc, f = 100 MHz) Output Capacitance (VCB = –5.0 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = –0.5 Vdc, IC = 0, f = 1.0 MHz) Input Impedance (IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz) Voltage Feedback Ratio (IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz) Small – Signal Current Gain (IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz) Output Admittance (IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz) Noise Figure (IC = –100 mAdc, VCE = –5.0 Vdc, RS = 1.0 kΩ, f = 1.0 kHz) fT Cobo Cibo hie hre hfe hoe NF 250 — — 2.0 0.1 100 3.0 — — 4.5 10 12 10 400 60 4.0 MHz pF pF kΩ X 10– 4 — mmhos dB SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time 3. Pulse Test: Pulse Width (VCC = –3.0 Vdc, VBE = 0.5 Vdc, IC = –10 mAdc, IB1 = –1.0 mAdc) (VCC = –3.0 Vdc, IC = –10 mAdc, IB1 = IB2 = –1.0 mAdc) td tr ts tf — — — — 35 35 225 75 ns ns v 300 ms, Duty Cycle v 2.0%. 3V 275 10 k +9.1 V < 1 ns < 1 ns 3V 275 +0.5 V 0 CS < 4 pF* 10 k 1N916 CS < 4 pF* 10.6 V 300 ns Duty Cycle = 2% 10 < t1 < 500 ms Duty Cycle = 2% t1 10.9 V * Total shunt capacitance of test jig and connectors Figure 1. Delay and Rise Time Equivalent Test Circuit http://www.SeCoSGmbH.com Figure 2. Storage and Fall Time Equivalent Test Circuit Any changing of specification will not be informed individual 01-Jun-2004 Rev. B Page 2 of 5 MMBT3906W Elektronische Bauelemente General Purpose Transistor PNP Silicon TYPICAL TRANSIENT CHARACTERISTICS TJ = 25°C TJ = 125°C 10 7.0 Capacitance (pF) 5.0 Cobo Cibo 5000 3000 2000 Q, Charge (pC) 1000 700 500 300 200 100 70 50 QT VCC = 40 V IC/IB = 10 3.0 2.0 QA 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 Reverse Bias (V) 20 30 40 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 I C, Collector Current (mA) 200 Figure 3. Capacitance 500 300 200 100 70 50 30 20 10 7 5 IC/IB = 10 500 300 200 t f , Fall Time (ns) 100 70 50 30 20 10 7 5 1.0 2.0 3.0 Figure 4. Charge Data VCC = 40 V IB1 = IB2 IC/IB = 20 Time (ns) tr @ VCC = 3.0 V 15 V 40 V 2.0 V td @ VOB = 0 V 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 I C, Collector Current (mA) IC/IB = 10 5.0 7.0 10 20 30 50 70 100 200 I C, Collector Current (mA) Figure 5. Turn – On Time Figure 6. Fall Time http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2004 Rev. B Page 3 of 5 MMBT3906W Elektronische Bauelemente General Purpose Transistor PNP Silicon TYPICAL AUDIO SMALL–SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (VCE = – 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz) 5.0 4.0 NF, Noise Figure (dB) 3.0 2.0 1.0 0 0.1 SOURCE RESISTANCE = 2.0 k IC = 100 A SOURCE RESISTANCE = 200 IC = 1.0 mA 12 f = 1.0 kHz 10 NF, Noise Figure (dB) 8 6 4 2 20 40 100 0 0.1 0.2 0.4 1.0 2.0 4.0 10 20 R g, Source Resistance (k OHMS) IC = 1.0 mA IC = 0.5 mA W W SOURCE RESISTANCE = 200 IC = 0.5 mA SOURCE RESISTANCE = 2.0 k IC = 50 A m m m IC = 100 mA IC = 50 A 40 100 0.2 0.4 1.0 2.0 4.0 10 f, Frequency (kHz) Figure 7. Figure 8. h PARAMETERS (VCE = – 10 Vdc, f = 1.0 kHz, TA = 25°C) 300 h oe, Output Admittance ( mhos) 100 70 50 30 20 200 h fe , DC Current Gain 100 70 50 30 m 10 7 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 I C, Collector Current (mA) 5.0 7.0 10 5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 I C, Collector Current (mA) 3.0 5.0 7.0 10 Figure 9. Current Gain 20 10 h ie , Input Impedance (k OHMS) 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 h re , Voltage Feedback Ratio (X 10 –4 ) 10 7.0 5.0 3.0 2.0 Figure 10. Output Admittance 1.0 0.7 0.5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 I C, Collector Current (mA) 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 I C, Collector Current (mA) 5.0 7.0 10 Figure 11. Input Impedance http://www.SeCoSGmbH.com Figure 12. Voltage Feedback Ratio Any changing of specification will not be informed individual 01-Jun-2004 Rev. B Page 4 of 5 MMBT3906W Elektronische Bauelemente General Purpose Transistor PNP Silicon TYPICAL STATIC CHARACTERISTICS 2.0 h FE, DC Current Gain (Normalized) TJ = +125°C +25°C – 55°C VCE = 1.0 V 1.0 0.7 0.5 0.3 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 I C, Collector Current (mA) 10 20 30 50 70 100 200 Figure 13. DC Current Gain 1.0 TJ = 25°C VCE , Collector Emitter Voltage (V) 0.8 0.6 0.4 0.2 0 0.01 IC = 1.0 mA 10 mA 30 mA 100 mA 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 I B, Base Current (mA) 0.7 1.0 2.0 3.0 5.0 7.0 10 Figure 14. Collector Saturation Region 1.0 0.8 V, Voltage (V) 0.6 0.4 0.2 0 VCE(sat) @ IC/IB = 10 1.0 q V, Temperature Coefficients (mV/ °C) TJ = 25°C VBE(sat) @ IC/IB = 10 VBE @ VCE = 1.0 V 0.5 0 – 0.5 qVC FOR VCE(sat) +25°C TO +125°C – 55°C TO +25°C +25°C TO +125°C – 1.0 – 1.5 – 2.0 0 20 – 55°C TO +25°C qVB FOR VBE(sat) 40 60 80 100 120 140 I C, Collector Current (mA) 160 180 200 1.0 2.0 5.0 50 10 20 I C, Collector Current (mA) 100 200 Figure 15. “ON” Voltages Figure 16. Temperature Coefficients http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2004 Rev. B Page 5 of 5