SCS521DS

SCS521DS Elektronische Bauelemente 0.1 A, 30 V Silicon Epitaxial Planar Schottky Barrier Rectifiers RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION ● ● ● Silicon epitaxial planar Schottky barrier Diodes Small surface mounting type High reliability DFNWB APPLICATION ● ● High speed switching For Detection For portable equipment: (i.e. Mobile phone, MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.) 1 Cathode 2 Anode PACKAGE INFORMATION Weight: 0.0123 g (approximately) REF. A B C D Millimeter Min. Max. 0.55 0.65 0.95 1.050.4 0.5 0 0.05 REF. E F G H Millimeter Min. Max. 0.15 0.35 0.05REF 0.4 0.6 0.65TYP MARKING CODE F +Anode Cathode - MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (Single diode at TA = 25°C) Parameter DC Reverse Voltage Mean Rectifying Current Peak Forward Surge Current Junction, Storage Temperature Symbol VR IO IFSM TJ, TSTG Limits 30 100 1.0 +125, -40 ~ +125 Unit V mA A ℃ ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise specified) Parameters Forward Voltage Reverse Current Symbol VF IR Min. - Typ. - Max. 0.35 10 Unit V uA Test Conditions IF = 10mA VR = 10V 11-Nov-2009 Rev. B Page 1 of 2 SCS521DS Elektronische Bauelemente 0.1 A, 30 V Silicon Epitaxial Planar Schottky Barrier Rectifiers RATINGS AND CHARACTERISTIC CURVES 11-Nov-2009 Rev. B Page 2 of 2