SMG1330N

SMG1330N Elektronische Bauelemente 2.0A , 30V , RDS(ON) 58 mΩ N-Channel Enhancement Mode MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(ON) and to ensure minimal power loss and heat dissipation. A L 3 SC-59 3 Top View CB 1 2 2 FEATURES Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SC59 saves board space. Fast switching speed. High performance trench technology. K 1 E D F REF. A B C D E F G Millimeter Min. Max. 2.70 3.10 2.25 3 .0 0 1.30 1 .7 0 1.00 1.40 1.70 2.30 0.35 0.50 H REF. G H J K L J Millimeter Min. Max. 0.10 REF. 0.40 REF. 0.10 0.20 0.45 0.55 0.85 1.15 APPLICATION DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. PACKAGE INFORMATION Package SC-59 MPQ 3K Leader Size 7 inch TOP VIEW 1 3 2 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 2 1 1 Symbol VDS VGS TA=25°C TA=70°C ID IDM IS PD TA=70°C Ratings 30 ±20 2.0 1.7 ±20 1.6 0.34 0.22 Unit V V A A A A W W °C Continuous Source Current (Diode Conduction) Power Dissipation 1 TA=25°C Operating Junction and Storage Temperature Range TJ, TSTG -55~150 Thermal Resistance Ratings Maximum Junction to Ambient 1 t ≦ 5 sec RθJA Steady State 100 °C / W 166 Notes: 1 Surface Mounted on 1” x 1” FR4 Board. 2 Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 29-Aug-2011 Rev. A Page 1 of 2 SMG1330N Elektronische Bauelemente 2.0A , 30V , RDS(ON) 58 mΩ N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current 1 Symbol VGS(th) IGSS IDSS ID(on) 1 Min. 1 10 - Typ. 11.3 0.75 2 Max. ±100 1 10 58 82 - Unit V nA µA A m S V Test Conditions VDS=VGS, ID=250uA VDS=0, VGS= ±20V VDS=24V, VGS=0 VDS=24V, VGS=0, TJ=55°C VDS =5V, VGS=10V VGS=10V, ID=2A VGS=4.5V, ID=1.7A VDS=10V, ID=2A IS=1.6A, VGS=0 Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage 1 RDS(ON) gfs VSD Qg Qgs Qgd Td(on) Tr Td(off) Tf Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time - 7.5 0.6 1 8 24 35 10 nS VDD=10V, VGEN=4.5V, RL=15 , ID=1A nC VDS=10V, VGS=5V, ID=2A Notes: 1 Pulse test：PW ≦ 300 µs duty cycle ≦ 2%. 2 Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 29-Aug-2011 Rev. A Page 2 of 2