SMG2301P

SMG2301P Elektronische Bauelemente -2.6 A, -20 V, RDS(ON) 130 m P-Channel Enhancement MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation.Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. A 3 SC-59 L 3 Top View 1 2 CB 1 2 K E D FEATURES     Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SC-59 saves board space. Fast switching speed. High performance trench technology. F G Millimeter Min. Max. 2.70 3.10 2.25 3.00 1.30 1.70 1.00 1.40 1.70 2.30 0.35 0.50 REF. A B C D E F H Millimeter Min. Max. 0.10 REF. 0.40 REF. 0.10 0.20 0.45 0.55 0.85 1.15 J REF. G H J K L PACKAGE INFORMATION Package SC-59 MPQ 3K LeaderSize 7’ inch  Gate  Drain  Source MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 2 1 Symbol VDS VGS TA=25°C TA=70°C ID IDM IS PD TJ, TSTG Ratings -20 ±8 -2.6 -1.5 -10 ±1.6 1.25 0.8 -55 ~ 150 100 166 Unit V V A A A W °C Pulsed Drain Current Continuous Source Current (Diode Conduction) 1 TA=25°C TA=70°C Operating Junction and Storage Temperature Range Power Dissipation 1 t≦5 sec Steady-State Thermal Resistance Ratings Maximum Junction to Ambient 1 RθJA °C/W Notes: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 14-Jan-2011 Rev. B Page 1 of 4 SMG2301P Elektronische Bauelemente -2.6 A, -20 V, RDS(ON) 130 m P-Channel Enhancement MOSFET ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min. Static Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current 1 Drain-Source On-Resistance 1 Forward Transconductance 1 Diode Forward Voltage VGS(th) IGSS IDSS ID(ON) RDS(ON) gFS VSD -0.4 -3 3 -0.70 -1 ±100 -1 -10 0.130 0.190 V nA μA A Ω S V VDS = VGS, ID = -250μA VDS = 0V, VGS= ±8V VDS = -16V, VGS= 0V VDS = -16V, VGS= 0V, TJ=55°C VDS = -5V, VGS= -4.5V VGS= -4.5V, ID = -2.6A VGS= -2.5V, ID = -2.1A VDS= -5V,,ID = -2.8A IS= -1.6A, VGS= 0V Typ. Max. Unit Teat Conditions Dynamic 2 Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Qg Qgs Qgd Td(ON) Tr Td(OFF) Tf 12.2 1.1 1.5 6.5 20 31 21 nS VDD= -5V VGEN= -4.5V RG= 6Ω RL= 5Ω nC ID= -2.6A VDS= -5V VGS= -4.5V Notes: 1. Pulse test：PW ≦ 300 us duty cycle ≦ 2%. 2. Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 14-Jan-2011 Rev. B Page 2 of 4 SMG2301P Elektronische Bauelemente -2.6 A, -20 V, RDS(ON) 130 m P-Channel Enhancement MOSFET CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 14-Jan-2011 Rev. B Page 3 of 4 SMG2301P Elektronische Bauelemente -2.6 A, -20 V, RDS(ON) 130 m P-Channel Enhancement MOSFET CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 14-Jan-2011 Rev. B Page 4 of 4