SMG2371P

SMG2371P Elektronische Bauelemente -1A, -100V, RDS(ON) 1.2  P-Channel Enhancement MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES    SC-59 A 3 3 Low RDS(on) trench technology. Low thermal impedance. Fast switching speed. 1 L Top View 2 CB 1 2 K E D APPLICATIONS     PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters. White LED boost converters. F G H J REF. A B C D E F PACKAGE INFORMATION Package SC-59 MPQ 3K LeaderSize 7’ inch Millimeter Min. Max. 2.70 3.10 2.25 3.00 1.30 1.70 1.00 1.40 1.70 2.30 0.35 0.50 REF. G H J K L Millimeter Min. Max. 0.10 REF. 0.40 REF. 0.10 0.20 0.45 0.55 0.85 1.15 1 3 2 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) Power Dissipation 1 1 Symbol VDS VGS TA=25°C TA=70°C ID IDM IS TA=25°C TA=70°C PD TJ, TSTG Ratings -100 ±20 -1 -0.8 -10 -1.6 1.3 0.8 -55 ~ 150 Unit V V A A A W °C Operating Junction and Storage Temperature Range Thermal Resistance Data Maximum Junction to Ambient 1 t≦10 sec Steady-State RθJA 100 166 °C/W Notes: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 15-Mar-2011 Rev. A Page 1 of 4 SMG2371P Elektronische Bauelemente -1A, -100V, RDS(ON) 1.2  P-Channel Enhancement MOSFET ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current 1 Drain-Source On-Resistance 1 Forward Transconductance 1 Diode Forward Voltage Symbol VGS(th) IGSS IDSS ID(ON) RDS(ON) gFS VSD Min. Typ. 5 -0.81 2 Max. -3.5 ±100 -1 -25 1.2 1.3 - Unit V nA μA A Ω S V Test Conditions VDS=VGS, ID= -250μA VDS=0, VGS= ±20V VDS= -80V, VGS=0 VDS= -80V, VGS=0, TJ=55°C VDS= -10V, VGS= -10V VGS= -10V, ID= -1A VGS= -4.5V, ID= -0.9A VDS= -15V,,ID= -1A IS= -0.8A, VGS=0 Static -1 -10 - Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qgs Qgd Td(ON) Tr Td(OFF) Tf Ciss Coss Crss - 3.7 1.1 1.7 3.5 3.8 15.5 10.3 358 54 29 nS nC ID= -1A VDS= -50V VGS= -4.5V VDD= -50V VGEN= -10V RL=50Ω ID= -1A RGEN=6Ω f=1MHz VDS= -15V VGS=0 pF Notes: 1. Pulse test：PW≦300 us duty cycle≦2%. 2. Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 15-Mar-2011 Rev. A Page 2 of 4 SMG2371P Elektronische Bauelemente -1A, -100V, RDS(ON) 1.2  P-Channel Enhancement MOSFET CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 15-Mar-2011 Rev. A Page 3 of 4 SMG2371P Elektronische Bauelemente -1A, -100V, RDS(ON) 1.2  P-Channel Enhancement MOSFET CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 15-Mar-2011 Rev. A Page 4 of 4