SSE70N10-44P

SSE70N10-44P Elektronische Bauelemente 70A , 100V , RDS(ON) 44mΩ N-Channel Enhancement Mode MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. D C TO-220P B R T FEATURES Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe TO-220P saves board space. Fast Switch Speed. High performance trench technology. G E A S F H I J K L U X M P APPLICATION DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. N-Channel D2 Q N O V Q W 123 REF. A B C D E F G H I J K L Millimeter Min. Max. 7.90 8.10 9.45 9.65 9.87 10.47 11.50 1.06 1.46 2.60 3.00 6.30 6.70 8.35 8.75 14.7 15.3 1.60 Typ. 1.10 1.30 1.17 1.37 REF. M N O P Q R S T U V W X Millimeter Min. Max. 1.50 0.75 0.95 0.66 0.86 13.50 14.50 2.44 3.44 3.50 3.70 1.15 1.45 4.30 4.70 2.7 1.89 3.09 0.40 0.60 2.60 3.60 G1 S3 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 2 1 1 Symbol VDS VGS TC=25°C ID IDM IS TC=25°C PD TJ, TSTG Ratings 100 ±20 70 390 110 300 -55~175 Unit V V A A A W °C Continuous Source Current (Diode Conduction) Power Dissipation 1 Operating Junction and Storage Temperature Range Thermal Resistance Rating Maximum Junction to Ambient Maximum Junction to Case Notes: 1 Package Limited. 2 Pulse width limited by maximum junction temperature. 1 RθJA RθJC 62.5 °C / W 0.5 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 14-Nov-2011 Rev. A Page 1 of 2 SSE70N10-44P Elektronische Bauelemente 70A , 100V , RDS(ON) 44mΩ N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current 1 Symbol Min. Typ. Max. Unit V nA µA Teat Conditions VDS=VGS, ID=250µA VDS=0, VGS=20V VDS=80V, VGS=0 VDS=80V, VGS=0, TJ=55°C Static VGS(th) IGSS IDSS ID(on) 1 1 120 - 30 1.1 2 ±100 1 25 44 A m VDS=5V, VGS=10V VGS=10V, ID=2A VGS=4.5V, ID=2A Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage 1 RDS(ON) gfs VSD - 64 S V VDS=15V, ID=2A IS=2A, VGS=0 Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Qg Qgs Qgd Td(on) Tr Td(off) Tf - 70 10 20 10 30 30 30 nS nC VDS=15V, VGS=4.5V, ID=90A VDD=25V, VGEN=10V, RL=25 , ID=34A Notes: 1 Pulse test：PW ≦ 300 µs duty cycle ≦ 2%. 2 Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 14-Nov-2011 Rev. A Page 2 of 2