SSG4390N

SSG4390N Elektronische Bauelemente 1.9A, 150V, RDS(ON) 625m N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. SOP-8 B L D M FEATURES     Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOP-8 saves board space. Fast switching speed. High performance trench technology. DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. A C N J K H G F E REF. APPLICATION A B C D E F G Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP. REF. H J K L M N Millimeter Min. Max. 0.35 0.49 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF. PACKAGE INFORMATION Package SOP-8 MPQ 2.5K LeaderSize 13’ inch S S S G D D D D ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) Total Power Dissipation 1 1 Symbol VDS VGS TA = 25°C TA = 70°C ID IDM IS PD TJ, TSTG Rating 150 Unit V V A A A W °C ±20 1.9 1.5 10 3.6 3.1 2.2 -55 ~ 150 TA = 25°C TA = 70°C Operating Junction & Storage Temperature Range THERMAL RESISTANCE RATINGS Maximum Junction to Ambient 1 t ≦ 10 sec Steady State RθJA 40 80 °C / W °C / W Notes: 1 Surface Mounted on 1” x 1” FR4 Board. 2 Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 09-Mar-2011 Rev. B Page 1 of 4 SSG4390N Elektronische Bauelemente 1.9A, 150V, RDS(ON) 625m N-Ch Enhancement Mode Power MOSFET ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current 1 Symbol VGS(th) IGSS IDSS ID(on) RDS(ON) gfs VSD Min. 1 5 - Typ. Static 5 0.8 Max. - Unit V nA μA A mΩ S V Test conditions VDS=VGS, ID=250μA VDS=0, VGS=±20V VDS=120V, VGS=0 VDS=120V, VGS=0, TJ= 55°C VDS=5V, VGS=10V VGS=10V, ID=1.9A VGS=4.5V, ID=1.6A VDS=15V, ID=1.9A IS=1.8A, VGS=0 ±100 1 10 625 900 2 Drain-Source On-Resistance 1 Forward Transconductance Diode Forward Voltage 1 Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss 3.5 1.3 1.5 4.7 5 16 5 356 38 17 nS nC ID=1.9A VDS=75V VGS=4.5V VDD=75V ID=1.9A VGEN=10V RL= 50Ω RGEN=6Ω VDS=15V VGS=0V f=1MHz pF Notes: 1 Pulse test：PW ≦ 300μs duty cycle ≦ 2%. 2 Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 09-Mar-2011 Rev. B Page 2 of 4 SSG4390N Elektronische Bauelemente 1.9A, 150V, RDS(ON) 625m N-Ch Enhancement Mode Power MOSFET CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 09-Mar-2011 Rev. B Page 3 of 4 SSG4390N Elektronische Bauelemente 1.9A, 150V, RDS(ON) 625m N-Ch Enhancement Mode Power MOSFET CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 09-Mar-2011 Rev. B Page 4 of 4