SSG4403_09

SSG4403 Elektronische Bauelemente P-Ch Enhancement Mode Power MOSFET -6.1 A, -30 V, RDS(ON) 50 mΩ SOP-8 B RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SSG4403 uses advanced trench technology to provide excellent on-resistance, low gate charge and operation with gate voltages as low as 2.5V. The device is suitable for use as a load switch or in PWM applications. L D M FEATURES Low Gate Charge Lower On-resistance Fast Switching Characteristic A C N J K H G F E PACKAGE DIMENSIONS D 8 D 7 D 6 D 5 Drain REF. A B C D E F G Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4 .0 0 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP. REF. H J K L M N Millimeter Min. Max. 0.35 0.49 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF. 4403SC = Date Code 1 S 2 S 3 S 4 G Gate Source ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate-Source Voltage 3 Continuous Drain Current 3 Continuous Drain Current 1 Pulsed Drain Current Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Resistance Junction-ambient 3 SYMBOL VDS VGS ID @Ta=25℃ ID @Ta=70℃ IDM PD @Ta=25℃ Tj, Tstg THERMAL DATA Rθj-amb RATINGS -30 ±12 -6.1 -5.1 -60 2.5 0.02 -55 ~ +150 50 UNIT V V A A A W W/℃ ℃ ℃/W Max. P-CHANNEL ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise specified) PARAMETER Drain-Source Breakdown Voltage Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25℃) Drain-Source Leakage Current(Tj=55℃) Static Drain-Source On-Resistance Total Gate Charge Gate-Source Charge Gate-Drain (“Miller”) Change 2 Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Forward On Voltage Continuous Source Current (Body Diode) 2 Reverse Recovery Time Reverse Recovery Charge Notes: 2 2 2 SYMBOL BVDSS VGS(th) gfs IGSS MIN. TYP. M AX. UNIT V V S nA µA µA m TEST CONDITIONS VGS=0, ID=-250µA VDS=VGS, ID=-250µA VDS=-5V, ID=-5A VGS= ±12V VDS=-30V, VGS=0 VDS=-24V, VGS=0 VGS=-10V, ID=-6.1A VGS=-4.5V, ID=-5A VGS=-2.5 V, ID=-1 A ID=-5 A VDS=-15 V VGS=-4.5 V VDS=-15 V ID=-10 V RG=6 RL=2.4 VGS=0 V VDS=-15 V f=1.0 MHz IS=-1A, VGS=0 V IS = -5A, VGS = 0V, dl/dt = 100A/µs -30 -0.7 -1.3 11 ±100 -1 IDSS -5 50 RDS(ON) 61 117 Qg 9.4 Qgs 2 Qgd 3 Td(on) 7.6 Tr 8.6 Td(off) 44.7 Tf 16.5 Ciss 940 Coss 104 Crss 73 SOURCE-DRAIN DIODE VSD -1.0 IS -4.2 Trr 22.7 Qrr 15.9 - nC ns pF V A ns nC 1. Pulse width limited by Max. junction temperature. 2. Pulse width≦300µs, duty cycle≦2%. 3. Surface Mounted on 1 in2 copper pad of FR4 board; 125 °C/W when mounted on Min. copper pad. Page 1 of 3 29-Oct-2009 Rev. B SSG4403 Elektronische Bauelemente P-Ch Enhancement Mode Power MOSFET -6.1 A, -30 V, RDS(ON) 50 mΩ CHARACTERISTIC CURVE 29-Oct-2009 Rev. B Page 2 of 3 SSG4403 Elektronische Bauelemente P-Ch Enhancement Mode Power MOSFET -6.1 A, -30 V, RDS(ON) 50 mΩ CHARACTERISTIC CURVE (cont’d) 29-Oct-2009 Rev. B Page 3 of 3