SSG4990N

SSG4990N Elektronische Bauelemente 10 A, 100 V, RDS(ON) 81 m Dual-N Channel Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management In portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. SOP-8 B L D M A C N FEATURES  J H G K    Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOP-8 saves board space. Fast switching speed. High performance trench technology. F E REF. A B C D E F G PACKAGE INFORMATION Package SOP-8 MPQ 2.5K LeaderSize 13’ inch Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP. REF. H J K L M N Millimeter Min. Max. 0.35 0.49 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF. S G S G D D D D MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) 1 Total Power Dissipation 1 TA = 25°C TA = 70°C TA = 25°C TA = 70°C Symbol VDS VGS ID @ IDM IS PD @ TJ, TSTG t≦5 sec t≦5 sec RθJC RθJA Ratings 100 ±20 10 8.2 50 2.3 2.1 1.3 -55 ~ 150 40 60 Unit V V A A A A W W °C °C / W °C / W Operating Junction & Storage Temperature Range Thermal Resistance Junction-Case (Max.) Notes: 1. 2. Surface Mounted on 1” x 1” FR4 Board. Pulse width limited by maximum junction temperature. 1 Thermal Resistance Ratings Thermal Resistance Junction-ambient (Max.) 1 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 14-Jan-2011 Rev. B Page 1 of 2 SSG4990N Elektronische Bauelemente 10 A, 100 V, RDS(ON) 81 m Dual-N Channel Mode Power MOSFET ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Current Zero Gate Voltage Drain Current On-State Drain Current 1 Max. Unit Teat Conditions V(BR)DSS VGS(th) IGSS IDSS ID(on) RDS(ON) gfs VSD 100 1 20 - 40 0.7 ±100 1 25 81 92 - V V nA μA μA A mΩ S V VGS= 0V, ID= 250μA VDS= VGS, ID= 250μA VDS= 0V, VGS= 20V VDS= 80V, VGS= 0V VDS= 80V, VGS= 0V, TJ= 55°C VDS= 5V, VGS= 10V VGS= 10V, ID= 4.2A VGS= 4.5V, ID= 4A VDS= 15V, ID= 4.2A IS= 2.3A, VGS= 0V Drain-Source On-Resistance 1 Forward Transconductance Diode Forward Voltage 1 Dynamic 2 Total Gate Charge Gate-Source Charge Gate-Drain Charge Qg Qgs Qgd 20 7.0 7.0 nC ID= 4.2A VDS= 15V VGS= 5V Switching Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Notes: 1. 2. Pulse test：PW ≦ 300μs duty cycle ≦ 2%. Guaranteed by design, not subject to production testing. Td(on) Tr Td(off) Tf - 20 9 70 20 nS VDD= 25V ID= 1A VGEN= 10V RL= 25Ω http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 14-Jan-2011 Rev. B Page 2 of 2