SSG6612N

SSG6612N Elektronische Bauelemente 9.4 A, 30 V, RDS(ON) 22 m N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. SOP-8 B L D M FEATURES     Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOP-8 saves board space. Fast switching speed. High performance trench technology. A C N J K H G F E PACKAGE INFORMATION Package SOP-8 MPQ 2.5K LeaderSize 13’ inch REF. A B C D E F G Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP. REF. H J K L M N Millimeter Min. Max. 0.35 0.49 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF. S S S G D D D D MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) Total Power Dissipation 1 Operating Junction & Storage Temperature Range t ≦ 10 sec Steady State 1 Symbol VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM IS PD @ TA = 25°C PD @ TA = 70°C TJ, TSTG THERMAL RESISTANCE RATINGS Ratings 30 Unit V V A A A A W W °C °C / W °C / W ±20 9.4 7.4 30 1.6 3.1 2 -55 ~ 150 50 92 Maximum Junction to Ambient a Notes: 1 2 Surface Mounted on 1” x 1” FR4 Board. RθJA Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 06-Jan-2011 Rev. A Page 1 of 4 SSG6612N Elektronische Bauelemente 9.4 A, 30 V, RDS(ON) 22 m N-Ch Enhancement Mode Power MOSFET ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current 1 Drain-Source On-Resistance 1 Forward Transconductance Diode Forward Voltage 1 Symbol VGS(th) IGSS IDSS ID(on) RDS(ON) gfs VSD Min. 1 20 - Typ. Static 40 0.7 Max. - Unit V nA μA μA A mΩ S V Test conditions VDS= VGS, ID= 250μA VDS= 0V, VGS= ±20V VDS= 24V, VGS= 0V VDS= 24V, VGS= 0V, TJ= 55°C VDS= 5V, VGS= 10V VGS= 10V, ID= 9.2A VGS= 4.5V, ID= 7A VDS= 15V, ID= 9.2A IS= 2.3A, VGS= 0V ±100 1 25 22 30 2 Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Notes: 1 2 Pulse test：PW ≦ 300μs duty cycle ≦ 2%. Guaranteed by design, not subject to production testing. Qg Qgs Qgd CISS COSS CRSS Td(on) Tr Td(off) Tf - 4.0 1.1 1.4 720 165 60 16 5 23 3 nS pF nC ID= 7A VDS= 10V VGS= 4.5V f = 1 MHz VDS= 15V VGS= 0V VDD= 10V ID= 1A VGEN= 10V RL= 6Ω http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 06-Jan-2011 Rev. A Page 2 of 4 SSG6612N Elektronische Bauelemente 9.4 A, 30 V, RDS(ON) 22 m N-Ch Enhancement Mode Power MOSFET CHARACTERISTICS CURVE http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 06-Jan-2011 Rev. A Page 3 of 4 SSG6612N Elektronische Bauelemente 9.4 A, 30 V, RDS(ON) 22 m N-Ch Enhancement Mode Power MOSFET CHARACTERISTICS CURVE http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 06-Jan-2011 Rev. A Page 4 of 4