STT3962NE

STT3962NE Elektronische Bauelemente 2.3A , 60V , RDS(ON) 0.153 Ω N-Channel Enhancement Mode MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. A E TSOP-6 L 6 5 4 FEATURES Low RDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe TSOP-6 saves board space Fast switching speed High performance trench technology 1 2 3 B F DG K C H J APPLICATION DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.60 3.00 1.40 1.80 1.10 MAX. 1.90 REF. 0.30 0.50 REF. G H J K L Millimeter Min. Max. 0 0.10 0.60 REF. 0.12 REF. 0° 10° 0.95 REF. PACKAGE INFORMATION Package TSOP-6 MPQ 3K Leader Size 7 inch ESD Protection Diode 2KV G1 S2 G2 D1 S2 D2 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 2 1 1 Symbol VDS VGS TA=25° C TA=70° C ID IDM IS TA=25° C PD TA=70° C Ratings 60 ±20 2.3 Unit V V A 1.9 8 1.05 1.15 W 0.7 -55~150 ° C A A Continuous Source Current (Diode Conduction) Power Dissipation 1 Operating Junction and Storage Temperature Range Tj, Tstg Thermal Resistance Rating Maximum Junction to Ambient 1 t ≦ 10 sec Steady State RθJA 100 166 ° /W C Notes: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 4-Aug-2011 Rev. A Page 1 of 2 STT3962NE Elektronische Bauelemente 2.3A , 60V , RDS(ON) 0.153 Ω N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Gate-Threshold Voltage Gate-Body Leakage Current Zero Gate Voltage Drain Current On-State Drain Current 1 Symbol Min. Typ. Max. Unit V uA uA Teat Conditions VDS=VGS, ID=250uA VDS=0, VGS=20V VDS=48V, VGS=0 VDS=48V, VGS=0, TJ=55°C Static VGS(th) IGSS IDSS ID(on) 1 1 5 - 10 0.8 2 100 1 10 0.153 0.185 - A VDS =5V, VGS=10V VGS=10V, ID=2.3A VGS=4.5V, ID=2.1A Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage 1 1 RDS(ON) gfs VSD - S V VDS=5V, ID=2.3A IS=1.05A, VGS=0 Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Qg Qgs Qgd Td(on) Tr Td(off) Tf - 3 0.6 1 5 12 13 7 nS nC VDS=15V, VGS=4.5V, ID=2.3A VDD=15V, VGS=4.5V, RGEN=15 , ID=1A Notes: 1. Pulse test: PW ≦ 300us duty cycle ≦ 2%. 2. Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 4-Aug-2011 Rev. A Page 2 of 2