2N1132CSM

2N1132CSM MECHANICAL DATA Dimensions in mm (inches) HIGH SPEED MEDIUM POWER PNP SWITCHING TRANSISTOR FEATURES • SILICON PNP TRANSISTOR. • HIGH SPEED SWITCHING • SCREENING OPTIONS AVAILABLE 0.51 ± 0.10 (0.02 ± 0.004) 1.02 ± 0.10 (0.04 ± 0.004) 0.31 rad. (0.012) 3 2.54 ± 0.13 (0.10 ± 0.005) 2 1 1.91 ± 0.10 (0.075 ± 0.004) 3.05 ± 0.13 (0.12 ± 0.005) 0.76 ± 0.15 (0.03 ± 0.006) 0.31 rad. (0.012) 1.40 (0.055) max. APPLICATIONS • SMALL SIGNAL GENERAL PURPOSE AND SWITCHING APPLICATIONS LCC1 PACKAGE Pad 1 - Base Pad 2 - Emitter Pad 3 - Collector ABSOLUTE MAXIMUM RATINGS TCASE = 25°C unless otherwise stated VCBO VCEO VEBO IC PD Tstg, TJ Collector - Base Voltage Collector - Emitter Voltage (IB = 0) Emitter – Base Voltage (IC = 0) Continuous Collector Current Total Power Dissipation at TAmb = 25° C Derate Above 25° C Operating and Storage Temperature Range 50V 40V 5V 600mA 400mW 2.7mW/° C -55 to +175° C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk DOC 7518, ISSUE 1 2N1132CSM THERMAL CHARACTERISTICS Rth j-Amb Thermal resistance to ambient Max. 375 Unit ° C/W ELECTRICAL CHARACTERISTICS (TAmb = 25°C unless otherwise stated) Parameter V(BR)CBO* V(BR)CEO* ICBO IEBO ICER hFE* VCE(SAT)* VBE(SAT)* Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Test Conditions IC = 10µA IC = 10mA IE = 0 IE = 0 IB = 0 VCB = 50V VCB = 30V Tamb =150°C VEB = 5V VCE = 50V IC = 150mA IC = 5mA IB = 15mA Min. Typ. Max. 50 40 10 1 100 100 10 30 25 1.3 1.5 100 Unit V Collector to Base Cut-Off Current IE = 0 IC = 0 RBE