2N2222A

LAB MECHANICAL DATA Dimensions in mm (inches) 5 .8 4 5 .3 1 4 .9 5 4 .5 2 (0 .2 3 0 ) (0 .2 0 9 ) (0 .1 9 5 ) (0 .1 7 8 ) SEME 2N2222A HIGH SPEED MEDIUM POWER, NPN SWITCHING TRANSISTOR 5 .3 3 (0 .2 1 0 ) 4 .3 2 (0 .1 7 0 ) ) ) 0 0 1 7 2 1 . . 0 0 ( ( 3 2 FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR • HIGH SPEED SATURATED SWITCHING • ALSO AVAILABLE IN CERAMIC SURFACE MOUNT PACKAGE 3 3 . . 5 4 0 .4 8 0 .4 1 (0 .0 1 9 ) (0 .0 1 6 ) d ia . 2 .5 4 N (0 .1 0 0 ) om . !  TO–18 METAL PACKAGE (TO-206AA) Underside View PIN 1 – Emitter PIN 2 – Base PIN 3 – Collector ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO VCEO VEBO IC PD PD TJ TSTG Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Collector Current Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating Junction Temperature Storage Junction Temperature Range 75V 40V 6V 800mA 0.5W 3.33mW / °C 1.8W 12.05mW / °C 175°C –65 to +200°C Semelab plc. 1 2 .7 (0 .5 0 0 ) m in . ) 0 0 5 . . n 0 i ( m 7 . 2 1 Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Document Number 3554 Issue 1 LAB ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Parameter V(BR)CEO V(BR)CBO V(BR)EBO ICEX ICBO IEBO IBL OFF CHARACTERISTICS Collector – Emitter Sustaining Voltage Collector – Base Breakdown Voltage Emitter – Base Breakdown Voltage Collector Cut-off Current Collector – Base Cut-off Current Emitter Cut-off Current (IC = 0) Base Current ON CHARACTERISTICS VCE(sat)1 VBE(sat)1 Collector – Emitter Saturation Voltage Base – Emitter Saturation Voltage IC = 150mA IC = 500mA IC = 150mA IC = 500mA IC = 0.1mA IC = 1mA IC = 10mA hFE DC Current Gain IC = 150mA IC = 150mA IC = 500mA fT Cob Cib hfe SMALL SIGNAL CHARACTERISTICS Transition Frequency 2 IC = 20mA Output Capacitance Input Capacitance Small Signal Current Gain VCB = 10V VEB = 0.5V IC = 1mA IC = 10mA VCE = 20V IE = 0 IC = 0 VCE = 10V VCE = 10V IB = 15mA IB = 50mA IB = 15mA IC = 50mA VCE = 10V VCE = 10V VCE = 10V TA = –55°C VCE = 10V 1 VCE = 1V VCE = 10V 1 1 SEME 2N2222A Test Conditions IC = 10mA IC = 10μA IE = 10μA VCE = 60V IE = 0 IC = 0 VCE = 60V IB = 0 IE = 0 IC = 0 VEB(off) = 3V VCB = 60V TA = 150°C VEB = 3V VEB(off) = 3V Min. 40 75 6 Typ. Max. Unit V V V 10 0.01 10 10 20 0.3 1 nA μA nA nA V V 0.6 35 50 75 35 100 50 40 300 1.2 2 — 300 f = 100MHz f = 100kHz f = 100kHz f = 1kHz f = 1kHz MHz 8 25 pF — 50 75 300 375 10 25 225 60 td tr ts tf SWITCHING CHARACTERISTICS Delay Time VCC = 30V Rise Time Storage Time Fall Time IC = 150mA VCC = 30V VBE(off) = 0.5V IB1 = 15mA IC = 150mA IB1 = IB2 = 15mA ns ns NOTES: 1) Pulse test: tp ≤ 300μs , δ ≤ 2% 2) fT is defined as the frequency at which hFE extrapolates to unity. Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Document Number 3554 Issue 1