2N2918

LAB MECHANICAL DATA Dimensions in mm (inches) 8.51 (0.335) 9.40 (0.370) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 1.02 (0.040) Max. SEME 2N2914 2N2916 2N2918 DUAL NPN PLANAR TRANSISTORS IN TO77 PACKAGE 12.7 (0.500) Min. 0.41 (0.016) 0.53 (0.021) 5.08 (0.200) 2.54 (0.100) 2.54 (0.100) 3 2 4 5 6 0.74 (0.029) 1.14 (0.045) 1 45˚ 0.71 (0.028) 0.86 (0.034) TO–77 PACKAGE PIN 1 – Collector 1 PIN 2 – Base 1 PIN 3 – Emitter 1 PIN 4 – Emitter 2 PIN 5 – Base 2 PIN 6 – Collector 2 ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C unless otherwise stated) VCBO VCEO VEBO IC PD PD TSTG TL NOTES 1. Base – Emitter Diode Open Circuited. Collector – Base Voltage Collector – Emitter Voltage 1 Emitter – Base Voltage Continuous Collector Current Total Device Dissipation Total Device Dissipation TAMB = 25°C Derate above 25°C TC = 25°C Derate above 25°C Storage Temperature Range Lead temperature (Soldering, 10 sec.) EACH SIDE TOTAL DEVICE 45V 45V 6V 30 300mW 500mW 1.72mW / °C 2.86W / °C 750mW 1.5W 4.3mW / °C 8.6mW / °C –65 to 200°C 300°C Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim. 9/95 LAB ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated) Parameter V(BR)CBO V(BR)EBO ICBO ICEO IEBO Test Conditions 1 IE = 0 IB = 0 IC = 0 IE = 0 TA = 150°C VCE = 5V VEB = 5V VCE = 5V hFE DC Current Gain VCE = 5V VCE = 5V VBE VCE(sat) hib hob |hfe| Cobo Base – Emitter Voltage Collector – Emitter Saturation Voltage Small Signal Common – Base Input Impedance Small Signal Common – Base Output Admittance Small Signal Common – Base Current Gain Common – Base Open Circuit Output Capacitance * Pulse Test: tp = 300ms , d £ 1%. IB = 100mA VCB = 5V f = 1kHz VCB = 5V f = 1kHz VCE = 5V f = 20MHz VCB = 5V IE = 0 f = 140kHz to 1MHz IC = 500mA 3 IC = 1mA VCE = 5V IB = 0 IC = 10mA TA = –55°C IC = 100mA IC = 1mA IC = 1mA IC = 1mA 25 IC = 100mA IC = 0 150 30 225 300 Min. 45 45 6 Typ. SEME 2N2914 2N2916 2N2918 Max. Unit INDIVIDUAL TRANSISTOR CHARACTERISTICS Collector – Base Breakdown Voltage IC = 10mA V(BR)CEO* Collector – Emitter Breakdown Voltage IC = 10mA Emitter – Base Breakdown Voltage Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current IE = 10mA VCB = 45V V 10 10 2 2 600 — nA mA nA 0.70 0.35 32 1 V W mmho — 6 pF Parameter Test Conditions IC = 100mA IC = 100mA IC = 100mA IC = 100mA 2N2916 2N2918 Min. Typ. Max. Min. Typ. Max. Unit TRANSISTOR MATCHING CHARACTERISTICS hFE1 Static Forward Current VCE = 5V hFE2 |VBE1 – VBE2| Gain Balance Ratio Base – Emitter Voltage Differential See Note 2. VCE = 5V VCE = 5V VCE = 5V TA1 = 25°C VCE = 5V TA1 = 25°C 0.9 1 3 5 0.8 1 0.8 1 5 10 1.6 — |D(VBE1 – VBE2)DTA| Base – Emitter Voltage Differential Change With Temperature NOTES IC = 10mA to 1mA TA2 = –55°C TA2 = 125°C mV mV 2 1) Terminals not under test are open circuited under all test conditions. 2) The lower of the two readings is taken as hFE1. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim. 9/95