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2N3250CSM

2N3250CSM

  • 厂商:

    SEME-LAB

  • 封装:

  • 描述:

    2N3250CSM - GENERAL PURPOSE PNP TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FO...

  • 数据手册
  • 价格&库存
2N3250CSM 数据手册
LAB GENERAL PURPOSE PNP TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm (inches) 0.51 ± 0.10 (0.02 ± 0.004) 0.31 rad. (0.012) SEME 2N3250CSM FEATURES • SILICON PLANAR EPITAXIALPNP TRANSISTOR • HERMETIC CERAMIC SURFACE MOUNT PACKAGE (SOT23 COMPATIBLE) A 1.40 (0.055) max. 2.54 ± 0.13 (0.10 ± 0.005) 3 2 1 1.91 ± 0.10 (0.075 ± 0.004) 3.05 ± 0.13 (0.12 ± 0.005) A= 0.76 ± 0.15 (0.03 ± 0.006) 0.31 rad. (0.012) • CECC SCREENING OPTIONS • SPACE QUALITY LEVELS OPTIONS • HIGH SPEED SATURATED SWITCHING 1.02 ± 0.10 (0.04 ± 0.004) SOT23 CERAMIC (LCC1 PACKAGE) Underside View PAD 1 – Base PAD 2 – Emitter PAD 3 – Collector ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO VCEO VEBO IC PD PD TSTG , TJ RθJA RθJC Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Collector Current Total Device Dissipation @ TA =25°C Derate above 25°C Total Device Dissipation @ TA =25°C Derate above 25°C Operating and Storage Temperature Range Thermal Resistance Junction – Ambient Thermal Resistance Junction – Case -40V -50V -5.0V -200mA 0.36W 2.06mW / °C 1.2W 6.9mW / °C –65 to +200°C 486°C/W 146°C/W Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 2539 Issue 2 LAB ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Parameter Test Conditions V(BR)CEO* V(BR)CBO V(BR)EBO ICEX IBL Collector – Emitter Breakdown Voltage IC = -10mA Collector – Base Breakdown Voltage Emitter – Base Breakdown Voltage Collector – Cut-off Current Base Cutoff Current IC = 10µA IE = 10µA VCE = -40V VCE = -40V IC = -10mA IC = -50mA IC = -10mA IC = -50mA VCE = -1V hFE* DC Current Gain VCE = -1V VCE = -1V SMALL SIGNAL CHARACTERISTICS SEME 2N3250CSM Min. -40 -50 -5 Typ. Max. Unit V -20 -50 -25 -0.5 IB = 0 IE = 0 IC = 0 VEB = -3V VEB = -3V IB = -1mA IB = - 5mA IB = -1mA IB = - 5mA IC = -0.1mA IC = -1mA IC = -10mA IC = -10mA IE = 0 IC = 0 nA ON CHARACTERISTICS VCE(sat) VBE(sat)* Collector – Emitter Saturation Voltage Base – Emitter Saturation Voltage V V -0.6 40 45 50 -0.9 -1.2 — 150 ft Cobo Cibo hie hre hfe hoe NF rb’CC Current Gain Bandwidth Product Output Capacitance Input Capacitance Input Impedance Voltage Feedback Ratio Small Signal Current Gain Output Admittance Noise Figure Collector Base Time Constant VCE = -20V f = 100MHz VCB = -10V f = 1.0MHz VEB = -1.0V f = 1.0MHz 250 6.0 8.0 1.0 6.0 10 50 4.0 300 40 6 250 MHz pF pF kΩ x 10-4 — µhmos dB ps VCE = -10V f = 1.0KHz VCE = -5V f = 100Hz VCE = -20V f = 131.8MHz VCC = -3V IC = -10mA VCC = -3V IC = -1.0mA IC = -100µA RS = -1kΩ IC = -100mA SWITCHING CHARACTERISTICS td tr ts tf Delay Time Rise Time Storage Time Fall Time VBE = 0.5V IB1 = -1mA IC = -10mA 35 35 175 50 ns IB1 = IB1 = -1mA Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 2539 Issue 2
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