2N6059_10

SILICON MULTI-EPITAXIAL NPN TRANSISTOR 2N6059 • • • High Current Capability. Hermetic TO3 Metal package. Screening Options Available. ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO VCEO VEBO IC IB PD TJ Tstg Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Continuous Collector Current Base Current TC = 25°C Total Power Dissipation at Derate Above 25°C Junction Temperature Range Storage Temperature Range 100V 100V 5V 12A 0.2A 150W 1.00W/°C -55 to +175°C -55 to +175°C THERMAL PROPERTIES Symbols RθJC Parameters Thermal Resistance, Junction To Case Min. Typ. Max. 1.00 Units °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Document Number 8812 Issue 1 Page 1 of 3 Website: http://www.semelab-tt.com SILICON MULTI-EPITAXIAL NPN TRANSISTOR 2N6059 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Symbols ICEO ICEX IEBO V(BR)CEO VBE VBE(sat) (1) (1) Parameters Collector-Emitter Cut-Off Current Collector=Emitter Cut-Off Current Emitter-Base Cut-Off Current Collector-Emitter Breakdown Voltage Base-Emitter Voltage (nonsaturated) Base-Emitter Saturation Voltage Test Conditions VCE = 50V VCE = 100V VBE = 1.5V TC = 150°C VEB = 5V IC = 100mA IC = 6A IC = 12A IC = 12A VCE = 3V IB = 120mA IB = 120mA IB = 24mA TC = 150°C IC = 1.0A VCE = 3V VCE = 3V TC = -55°C IC = 12A VCE = 3V Min. Typ Max. 1.0 10 5 2 Units mA µA mA mA 100 2.8 4 3 2 2 1000 1000 300 150 18000 V VCE(sat) (1) Collector-Emitter Saturation Voltage IC = 6A hFE (1) Forward-Current Transfer Ratio IC = 6A DYNAMIC CHARACTERISTICS |hfe| Magnitude of CommonEmitter Small Signal Forward Current Transfer Ratio Small Signal ForwardCurrent Transfer Ratio Output Capacitance IC = 5A f = 1.0MHz IC = 5A f = 1.0kHz f = 1.0MHz IE = 0 IC = 5A IB = 20mA IC = 5A IB = 20mA VCC = 30V VCB = 10V VCC = 30V VCE = 3V VCE = 3V 10 250 hfe Cobo ton 1000 300 pF Turn-On Time 2 s 10 toff Turn-Off Time Notes Notes (1) Pulse Width ≤ 300us, δ ≤ 2% S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 8812 Issue 1 Page 2 of 3 SILICON MULTI-EPITAXIAL NPN TRANSISTOR 2N6059 MECHANICAL DATA Dimensions in mm (inches) 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 1 2 Case (3) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) TO3 (TO-204AA) METAL PACKAGE Underside View Pin 1 - Base Pin 2 - Emitter Case - Collector S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 8812 Issue 1 Page 3 of 3 22.23 (0.875) max. 38.61 (1.52) 39.12 (1.54) 29.9 (1.177) 30.4 (1.197)