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2N6301SMD

2N6301SMD

  • 厂商:

    SEME-LAB

  • 封装:

  • 描述:

    2N6301SMD - COMPLEMENTARY SILICON POWER TRANSISTORS - Seme LAB

  • 数据手册
  • 价格&库存
2N6301SMD 数据手册
2N6299SMD 2N6301SMD MECHANICAL DATA Dimensions in mm (inches) 0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 (0 .1 3 4 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 3 .6 0 (0 .1 4 2 ) M ax. 2N6299SMD05 2N6301SMD05 COMPLEMENTARY SILICON POWER TRANSISTORS 1 3 0 .7 6 (0 .0 3 0 ) m in . 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 2 2N6299SMD - PNP TRANSISTOR 2N6301SMD - NPN TRANSISTOR 9 .6 9 .3 1 1 .5 1 1 .2 7 (0 8 (0 8 (0 8 (0 .3 8 .3 6 .4 5 .4 4 1) 9) 6) 4) 0 .5 0 (0 .0 2 0 ) 0 .2 6 (0 .0 1 0 ) SMD1 (TO-276AB) Pad 1 – Base Pad 2 – Collector 7 .5 4 (0 .2 9 6 ) 0 .7 6 (0 .0 3 0 ) Pad 3 – Emitter Designed for general purpose amplifier and low frequency switching applications. m in . 2 .4 1 (0 .0 9 5 ) 2 .4 1 (0 .0 9 5 ) 0 .1 2 7 (0 .0 0 5 ) 3 .1 7 5 (0 .1 2 5 ) M ax. 3 .0 5 (0 .1 2 0 )  ! FEATURES • High DC Current Gain 1 0 .1 6 (0 .4 0 0 ) 0 .7 6 (0 .0 3 0 ) m in . 5 .7 2 (.2 2 5 ) • Monolithic Construction with Built-in Base–Emitter Shunt Resistors 0 .1 2 7 (0 .0 0 5 ) 16 PLC S 0 .5 0 (0 .0 2 0 ) 7 .2 6 (0 .2 8 6 ) 0 .1 2 7 (0 .0 0 5 ) 0 .5 0 (0 .0 2 0 ) 0 .2 6 (0 .0 1 0 ) SMD05 (TO-276AA) Pad 1 – Base Pad 2 – Collector Pad 3 – Emitter ABSOLUTE MAXIMUM RATINGS(Tcase = 25°C unless otherwise stated) VCEO VCBO VEBO IC IB PD TSTG , TJ Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Continuous Collector Current Peak Base Current Total Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range 80V 80V 5V 8A 16A 120mA 75W 0.428W/°C –65 to +200°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 2660 Issue 2 2N6299SMD 2N6301SMD 2N6299SMD05 2N6301SMD05 ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter OFF CHARACTERISTICS VCEO(sus) ICEO ICEX IEBO Collector – Emitter Sustaining Voltage * Collector Cut–off Current Collector Cut–off Current Emitter Cut–off Current ON CHARACTERISTICS hFE VCE(sat) VBE(sat) VBE(on) DC Current Gain* Collector – Emitter Saturation Voltage* Base – Emitter On Voltage* DYNAMIC CHARACTERISTICS Cob Output Capacitance Magnitude of Common Emitter hfe Small Signal Short Circuit Current Transfer Ratio hfe Small Signal Current Gain* VCB = 10V f = 0.1MHz VCE = 3V IC = 3A f = 1MHz VCE = 3V f = 1kHz IC = 3A 300 — 25 350 — IE = 0 200 pF VCE = 3V VCE = 3V IC = 4A IC = 8A VCE = 3V IC = 4A IC = 8A IB = 16mA IB = 80mA IB = 80mA IC = 4A 750 100 2.0 3.0 4.0 2.8 18000 — V V V IC = 100mA VCE = 40V IB = 0 IB = 0 TC = 150°C VBE = 5V IC = 0 80 0.5 0.5 5.0 2 V mA mA mA Test Conditions Min. Typ. Max. Unit VCE = Rated VCB VBE(off) = 1.5V Base – Emitter Saturation Voltage* IC = 8A Notes * Pulse test: tp = 300µs , Duty Cycle = 2% Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 2660 Issue 2
2N6301SMD 价格&库存

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