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2SA2127

2SA2127

  • 厂商:

    SEME-LAB

  • 封装:

  • 描述:

    2SA2127 - PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications - Seme LAB

  • 数据手册
  • 价格&库存
2SA2127 数据手册
Ordering number : ENN8022 2SA2127 2SA2127 Applications • PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications Voltage regulators, relay drivers, lamp drivers, electrical equipment. Features • • • Adoption of MBIT process. Low saturation voltage. High current capacity and wide ASO. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Conditions Ratings --50 --50 --6 --2 --4 --400 1 150 --55 to +150 Unit V V V A A mA W °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol ICBO IEBO hFE1 hFE2 fT Cob VCB=-40V, IE=0 VEB=--4V, IC=0 VCE=-2V, IC=-100mA VCE=-2V, IC=-1.5A VCE=-10V, IC=-300mA VCB=-10V, f=1MHz 200 40 420 16 MHz pF Conditions Ratings min typ max --1 --1 560 Unit µA µA Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 21805EA TS IM TB-00000380 No.8022-1/4 2SA2127 Continued from preceding page. Parameter Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time Symbol VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf Conditions IC=-1A, IB=--50mA IC=-1A, IB=--50mA IC=- µA, IE=0 -10 IC=-1mA, RBE=∞ IE=--10µA, IC=0 See specified test circuit. See specified test circuit. See specified test circuit. --50 --50 --6 35 250 24 Ratings min typ -0.2 -0.9 max --0.4 --1.2 Unit V V V V V ns ns ns Package Dimensions unit : mm 2006C 6.0 5.0 4.7 Switching Time Test Circuit PW=20µs D.C.≤1% INPUT IB1 IB2 VR 50Ω + 100µF VBE=5V RB IC OUTPUT RL 8.5 + 470µF VCC= --25V 1.0 0.5 0.6 0.5 3.0 0.5 14.0 IC=10IB1= --10IB2= --0.5A 123 1 : Emitter 2 : Collector 3 : Base 1.45 1.45 SANYO : MP --2.0 --1.8 IC -- VCE 0 --4 0 --5 mA --2.0 IC -- VBE VCE= --2V mA --30 mA mA --20 --10mA Collector Current, IC -- A --1.8 --1.6 --1.4 --1.2 --1.0 --0.8 Collector Current, IC -- A --1.6 --1.4 --1.2 --6mA --1.0 --0.8 --0.6 --0.4 --0.2 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --4mA --2mA 5°C 25°C --0.6 --0.4 --0.2 Ta= 7 IB=0 --1.8 --2.0 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 --1.1 Collector-to-Emitter Voltage, VCE -- V IT07578 Base-to-Emitter Voltage, VBE -- V --25 ° C IT07579 No.8022-2/4 2SA2127 1000 7 5 hFE -- IC VCE= --2V 1000 f T -- IC VCE= --10V Gain-Bandwidth Product, f T -- MHz 7 5 Ta=75°C DC Current Gain, hFE 3 2 25°C --25°C 3 2 100 7 5 3 --0.01 100 7 5 3 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC -- A 100 7 IT07580 --1.0 Cob -- VCB Collector Current, IC -- A IT07581 VCE(sat) -- IC f=1MHz 7 IC / IB=20 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V Output Capacitance, Cob -- pF 5 3 2 5 3 --0.1 7 5 3 2 2 = Ta °C 75 5 --2 °C 10 7 5 --0.1 °C 25 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 7 --0.01 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector-to-Base Voltage, VCB -- V 3 IT07582 --10 7 5 3 VBE(sat) -- IC Collector Current, IC -- A IT07583 ASO IC / IB=20 ICP= --4A IC= --2A
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