BC109DCSM

SILICON EPITAXIAL NPN TRANSISTOR BC109DCSM • • • Dual Silicon Planar NPN Transistors Hermetic Ceramic Surface Mount Package Designed For Low Noise General Purpose Amplifiers, Driver Stages and Signal Processing Applications Screening Options Available • ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO VCEO VEBO IC ICM PD Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Continuous Collector Current Peak Collector Current TA = 25°C Total Power Dissipation at Derate Above 25°C TC = 25°C Derate Above 25°C TJ Tstg Junction Temperature Range Storage Temperature Range Each Side Total Device 30V 20V 5V 100mA 200mA 300mW 500mW(1) 2mW/°C 3.3mW/°C 750mW 5mW/°C -65 to +175°C -65 to +175°C THERMAL PROPERTIES (Each Side) Symbols RθJA RθJC Parameters Thermal Resistance, Junction To Ambient Thermal Resistance, Junction To Case Min. Typ. Max. 500 200 Units °C/W °C/W Notes Notes (1) Total device power dissipation limited by package. Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Document Number 8124 Issue 1 Page 1 of 3 Website: http://www.semelab-tt.com SILICON EPITAXIAL NPN TRANSISTOR BC109DCSM ELECTRICAL CHARACTERISTICS (Each Side, TA = 25°C unless otherwise stated) Symbols ICBO V(BR)CBO V(BR)CEO V(BR)EBO VBE (2) (2) Parameters Collector-Cut-Off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Base-Emitter Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Forward-current transfer ratio Test Conditions VCB = 20V TA = 150°C IC = 10µA IC = 10mA IE = 10µA IC = 2mA IC = 10mA IC = 10mA IC = 100mA IC = 10mA IC = 100mA IC = 2mA IC = 10µA VCE = 5V VCE = 5V IB = 0.5mA IB = 5mA IB = 0.5mA IB = 5mA VCE = 5V VCE = 5V Min. Typ Max. 15 15 Units nA µA 30 20 5 550 700 700 250 600 750 900 200 40 800 mV V VCE(sat) (2) VBE(sat) hFE (2) (2) DYNAMIC CHARACTERISTICS fT Transition Frequency IC = 10mA f = 100MHz Small-Signal Current Gain IC = 2mA f = 1.0KHz Output Capacitance VCB = 10V f = 1.0MHz Input Capacitance VEB = 0.5V f = 1.0MHz IC = 0 12 pF IE = 0 6 pF VCE = 5V 240 900 VCE = 5V 150 MHz hfe Cobo Cibo Notes Notes (2) Pulse Width ≤ 300us, δ ≤ 2% S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 8124 Issue 1 Page 2 of 3 SILICON EPITAXIAL NPN TRANSISTOR BC109DCSM MECHANICAL DATA Dimensions in mm (inches) 2.29 ± 0.20 (0.09 ± 0.008) 1.65 ± 0.13 (0.065 ± 0.005) 1.40 ± 0.15 (0.055 ± 0.006) 0.64 ± 0.06 (0.025 ± 0.003) 2.54 ± 0.13 (0.10 ± 0.005) 2 1 A 3 4 5 6 0.23 rad. (0.009) A = 1.27 ± 0.13 (0.05 ± 0.005) 6.22 ± 0.13 (0.245 ± 0.005) LCC2 (MO-041BB) Underside View Pad 1 – Collector 1 Pad 2 – Base 1 Pad 3 – Base 2 Pad 4 – Collector 2 Pad 5 – Emitter 2 Pad 6 – Emitter 1 S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 8124 Issue 1 Page 3 of 3 4.32 ± 0.13 (0.170 ± 0.005)